| 10916431 |
Robust gate cap for protecting a gate from downstream metallization etch operations |
Raghuveer R. Patlolla, Hari Prasad Amanapu, Vimal Kamineni, Sugirtha Krishnamurthy, Cornelius Brown Peethala |
2021-02-09 |
$3,536,000 |
| 10741554 |
Third type of metal gate stack for CMOS devices |
Ramachandra Divakaruni, Sameer H. Jain, Keith H. Tabakman |
2020-08-11 |
$2,122,000 |
| 10262996 |
Third type of metal gate stack for CMOS devices |
Ramachandra Divakaruni, Sameer H. Jain, Keith H. Tabakman |
2019-04-16 |
$3,839,000 |
| 10083865 |
Partial spacer for increasing self aligned contact process margins |
Emre Alptekin, Ravikumar Ramachandran, Reinaldo Vega |
2018-09-25 |
$2,527,000 |
| 10043708 |
Structure and method for capping cobalt contacts |
Suraj K. Patil, Scott Beasor, Vimal Kamineni |
2018-08-07 |
$10,289,000 |
| 9997411 |
Formation of metal resistor and e-fuse |
Cung D. Tran, Emre Alptekin, Reinaldo Vega |
2018-06-12 |
$1,886,000 |
| 9985104 |
Contact first replacement metal gate |
Emre Alptekin, Ravikumar Ramachandran |
2018-05-29 |
$2,015,000 |
| 9929047 |
Partial spacer for increasing self aligned contact process margins |
Emre Alptekin, Ravikumar Ramachandran, Reinaldo Vega |
2018-03-27 |
$2,459,000 |
| 9679993 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Sameer H. Jain, Cung D. Tran, Reinaldo Vega |
2017-06-13 |
$2,356,000 |
| 9647124 |
Semiconductor devices with graphene nanoribbons |
Emre Alptekin, Reinaldo Vega |
2017-05-09 |
$10,322,000 |
| 9634006 |
Third type of metal gate stack for CMOS devices |
Ramachandra Divakaruni, Sameer H. Jain, Keith H. Tabakman |
2017-04-25 |
$1,937,000 |
| 9601380 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Sameer H. Jain, Cung D. Tran, Reinaldo Vega |
2017-03-21 |
$2,195,000 |
| 9553157 |
Diffusion-controlled oxygen depletion of semiconductor contact interface |
Emre Alptekin, Ahmet S. Ozcan, Kathryn T. Schonenberg, Cung D. Tran |
2017-01-24 |
$6,164,000 |
| 9530684 |
Method and structure to suppress finFET heating |
Emre Alptekin, Cung D. Tran, Reinaldo Vega |
2016-12-27 |
$8,113,000 |
| 9515168 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Sameer H. Jain, Cung D. Tran, Reinaldo Vega |
2016-12-06 |
$2,582,000 |
| 9496362 |
Contact first replacement metal gate |
Emre Alptekin, Ravikumar Ramachandran |
2016-11-15 |
$2,170,000 |
| 9496368 |
Partial spacer for increasing self aligned contact process margins |
Emre Alptekin, Ravikumar Ramachandran, Reinaldo Vega |
2016-11-15 |
$2,170,000 |
| 9472415 |
Directional chemical oxide etch technique |
Emre Alptekin, Sivananda K. Kanakasabapathy, Ahmet S. Ozcan, Cung D. Tran |
2016-10-18 |
$1,445,000 |
| 9397181 |
Diffusion-controlled oxygen depletion of semiconductor contact interface |
Emre Alptekin, Ahmet S. Ozcan, Kathryn T. Schonenberg, Cung D. Tran |
2016-07-19 |
$4,161,000 |
| 9391175 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Sameer H. Jain, Cung D. Tran, Reinaldo Vega |
2016-07-12 |
$3,552,000 |
| 9368493 |
Method and structure to suppress FinFET heating |
Emre Alptekin, Cung D. Tran, Reinaldo Vega |
2016-06-14 |
$2,204,000 |
| 9349836 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Sameer H. Jain, Cung D. Tran, Reinaldo Vega |
2016-05-24 |
$3,942,000 |
| 9331166 |
Selective dielectric spacer deposition for exposing sidewalls of a finFET |
Emre Alptekin, Sameer H. Jain, Cung D. Tran, Reinaldo Vega |
2016-05-03 |
$3,695,000 |
| 9324709 |
Self-aligned gate contact structure |
Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan |
2016-04-26 |
$1,566,000 |
| 9318323 |
Semiconductor devices with graphene nanoribbons |
Emre Alptekin, Reinaldo Vega |
2016-04-19 |
$757,000 |
