| 10741554 |
Third type of metal gate stack for CMOS devices |
Ramachandra Divakaruni, Viraj Y. Sardesai, Keith H. Tabakman |
2020-08-11 |
$2,122,000 |
| 10262996 |
Third type of metal gate stack for CMOS devices |
Ramachandra Divakaruni, Viraj Y. Sardesai, Keith H. Tabakman |
2019-04-16 |
$3,839,000 |
| 9875939 |
Methods of forming uniform and pitch independent fin recess |
Yue Ke, Alexander Reznicek, Benjamin G. Moser, Dominic J. Schepis, Melissa A. Smith +2 more |
2018-01-23 |
$14,858,000 |
| 9679993 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega |
2017-06-13 |
$2,356,000 |
| 9634006 |
Third type of metal gate stack for CMOS devices |
Ramachandra Divakaruni, Viraj Y. Sardesai, Keith H. Tabakman |
2017-04-25 |
$1,937,000 |
| 9601380 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega |
2017-03-21 |
$2,195,000 |
| 9514992 |
Unidirectional spacer in trench silicide |
Emre Alptekin, Unoh Kwon, Zhengwen Li, Hari V. Mallela, Ayse M. Ozbek +3 more |
2016-12-06 |
$2,582,000 |
| 9515168 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega |
2016-12-06 |
$2,582,000 |
| 9391175 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega |
2016-07-12 |
$3,552,000 |
| 9349836 |
Fin end spacer for preventing merger of raised active regions |
Emre Alptekin, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega |
2016-05-24 |
$3,942,000 |
| 9331166 |
Selective dielectric spacer deposition for exposing sidewalls of a finFET |
Emre Alptekin, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega |
2016-05-03 |
$3,695,000 |
| 9111962 |
Selective dielectric spacer deposition for exposing sidewalls of a finFET |
Emre Alptekin, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega |
2015-08-18 |
$3,868,000 |
| 8951868 |
Formation of functional gate structures with different critical dimensions using a replacement gate process |
— |
2015-02-10 |
$3,717,000 |
| 8652914 |
Two-step silicide formation |
Emre Alptekin, Reinaldo Vega |
2014-02-18 |
$4,910,000 |
| 8647954 |
Two-step silicide formation |
Emre Alptekin, Reinaldo Vega |
2014-02-11 |
$7,953,000 |
| 8642424 |
Replacement metal gate structure and methods of manufacture |
Jeffrey B. Johnson, Ying Li, Hasan M. Nayfeh, Ravikumar Ramachandran |
2014-02-04 |
$4,435,000 |
| 8629510 |
Two-step silicide formation |
Emre Alptekin, Reinaldo Vega |
2014-01-14 |
$7,408,000 |
| 8421077 |
Replacement gate MOSFET with self-aligned diffusion contact |
Carl Radens, Shahab Siddiqui, Jay William Strane |
2013-04-16 |
$3,567,000 |
| 8236637 |
Planar silicide semiconductor structure |
Henry K. Utomo, Ravikumar Ramachandran, Cung D. Tran |
2012-08-07 |
$7,112,000 |
| 7687338 |
Method of reducing embedded SiGe loss in semiconductor device manufacturing |
Shreesh Narasimha, Karen A. Nummy, Viorel Ontalus, Jang Sim |
2010-03-30 |
$5,470,000 |
| 7615435 |
Semiconductor device and method of manufacture |
Oleg Gluschenkov, Yaocheng Liu |
2009-11-10 |
$10,417,000 |
| 7538339 |
Scalable strained FET device and method of fabricating the same |
Brian J. Greene, William K. Henson |
2009-05-26 |
$7,976,000 |
