Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective dielectric spacer deposition for exposing sidewalls of a finFET

Selective dielectric spacer deposition for exposing sidewalls of a finFET

US Patent 9111962 · Granted Aug 18, 2015

Estimated economic value: $3,868,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Backside contacts for signal routing2025
Reduced capacitance between power via bar and gates2025
Dielectric tuning of negative capacitance in dual channel field effect transisto2025
Backside self aligned skip via2025
Source/drain contact at tight cell boundary2025
Wrap around metal via structure2025
Vertical transport field effect transistor (VTFET) with backside wraparound cont2025
Wraparound contact with reduced distance to channel2025
Pass-through wiring in notched interconnect2025
Semiconductor device with power via2025
SRAM macro design architecture2025
Vertical-transport field-effect transistor with backside gate contact2025