Issued Patents All Time
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9059316 | Structure and method for mobility enhanced MOSFETs with unalloyed silicide | Dureseti Chidambarrao, Oleg Gluschenkov, Judson R. Holt, Renee T. Mo, Kern Rim | 2015-06-16 |
| 8642434 | Structure and method for mobility enhanced MOSFETS with unalloyed silicide | Dureseti Chidambarrao, Oleg Gluschenkov, Judson R. Holt, Renee T. Mo, Kern Rim | 2014-02-04 |
| 8217423 | Structure and method for mobility enhanced MOSFETs with unalloyed silicide | Dureseti Chidambarrao, Oleg Gluschenkov, Judson R. Holt, Renee T. Mo, Kern Rim | 2012-07-10 |
| 7932144 | Semiconductor structure and method of forming the structure | Shreesh Narasimha, Katsunori Onishi, Kern Rim | 2011-04-26 |
| 7888197 | Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layer | Dureseti Chidambarrao, William K. Henson | 2011-02-15 |
| 7838932 | Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon | Ashima B. Chakravarti, Dureseti Chidambarrao, Judson R. Holt, Kern Rim | 2010-11-23 |
| 7741658 | Self-aligned super stressed PFET | Zhijiong Luo, Huilong Zhu | 2010-06-22 |
| 7714358 | Semiconductor structure and method of forming the structure | Shreesh Narasimha, Katsunori Onishi, Kern Rim | 2010-05-11 |
| 7709910 | Semiconductor structure for low parasitic gate capacitance | William K. Henson, Paul Chang, Dureseti Chidambarrao, Ricardo A. Donaton, Shreesh Narasimha +1 more | 2010-05-04 |
| 7696000 | Low defect Si:C layer with retrograde carbon profile | Subramanian S. Iyer, Jinghong Li | 2010-04-13 |
| 7675118 | Semiconductor structure with enhanced performance using a simplified dual stress liner configuration | Dureseti Chidambarrao, William K. Henson | 2010-03-09 |
| 7667263 | Semiconductor structure including doped silicon carbon liner layer and method for fabrication thereof | Zhijiong Luo | 2010-02-23 |
| 7655551 | Control of poly-Si depletion in CMOS via gas phase doping | Alexander Reznicek, Devendra K. Sadana | 2010-02-02 |
| 7632724 | Stressed SOI FET having tensile and compressive device regions | Dureseti Chidambarrao, William K. Henson | 2009-12-15 |
| 7615435 | Semiconductor device and method of manufacture | Oleg Gluschenkov, Sameer H. Jain | 2009-11-10 |
| 7598147 | Method of forming CMOS with Si:C source/drain by laser melting and recrystallization | Qiqing C. Ouyang, Kathryn T. Schonenberg, Chun-Yung Sung | 2009-10-06 |
| 7524740 | Localized strain relaxation for strained Si directly on insulator | Devendra K. Sadana, Kern Rim | 2009-04-28 |
| 7504309 | Pre-silicide spacer removal | Thomas W. Dyer, Sunfei Fang, Jiang Yan, Jun Jung Kim, Huilong Zhu | 2009-03-17 |
| 7498243 | Crystalline-type device and approach therefor | Michael D. Deal, James D. Plummer | 2009-03-03 |
| 7485519 | After gate fabrication of field effect transistor having tensile and compressive regions | Dureseti Chidambarrao, William K. Henson | 2009-02-03 |
| 7473608 | N-channel MOSFETs comprising dual stressors, and methods for forming the same | Jinghong Li, Zhijiong Luo, Anita Madan, Nivo Rovedo | 2009-01-06 |
| 7473594 | Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon | Ashima B. Chakravarti, Dureseti Chidambarrao, Judson R. Holt, Kern Rim | 2009-01-06 |
| 7473626 | Control of poly-Si depletion in CMOS via gas phase doping | Alexander Reznicek, Devendra K. Sadana | 2009-01-06 |
| 7279758 | N-channel MOSFETs comprising dual stressors, and methods for forming the same | Jinghong Li, Zhijiong Luo, Anita Madan, Nivo Rovedo | 2007-10-09 |
| 7273671 | Fuel cell and method for making the same | Yuji Saito, Jun Sasahara, Nariaki Kuriyama, Tadahiro Kubota, Toshifumi Suzuki +5 more | 2007-09-25 |