| 9455186 |
Selective local metal cap layer formation for improved electromigration behavior |
Matthew S. Angyal, Junjing Bao, Griselda Bonilla, Samuel S. Choi, James A. Culp +4 more |
2016-09-27 |
$4,099,000 |
| 9431535 |
Semiconductor devices having tensile and/or compressive stress and methods of manufacturing |
Haining Yang |
2016-08-30 |
$3,218,000 |
| 9406560 |
Selective local metal cap layer formation for improved electromigration behavior |
Matthew S. Angyal, Junjing Bao, Griselda Bonilla, Samuel S. Choi, James A. Culp +4 more |
2016-08-02 |
$5,615,000 |
| 9385038 |
Selective local metal cap layer formation for improved electromigration behavior |
Matthew S. Angyal, Junjing Bao, Griselda Bonilla, Samuel S. Choi, James A. Culp +4 more |
2016-07-05 |
$5,294,000 |
| 9276111 |
Semiconductor devices having tensile and/or compressive stress and methods of manufacturing |
Haining Yang |
2016-03-01 |
$579,000 |
| 9171848 |
Deep trench MIM capacitor and moat isolation with epitaxial semiconductor wafer scheme |
Herbert L. Ho, Jin Ping Liu |
2015-10-27 |
$712,000 |
| 9157980 |
Measuring metal line spacing in semiconductor devices |
Stephen E. Greco |
2015-10-13 |
$3,494,000 |
| 9076847 |
Selective local metal cap layer formation for improved electromigration behavior |
Matthew S. Angyal, Junjing Bao, Griselda Bonilla, Samuel S. Choi, James A. Culp +4 more |
2015-07-07 |
$5,899,000 |
| 9059177 |
Doping of copper wiring structures in back end of line processing |
Daniel C. Edelstein, Tze-man Ko, Andrew H. Simon, Wei-Tsu Tseng |
2015-06-16 |
$2,098,000 |
| 9018097 |
Semiconductor device processing with reduced wiring puddle formation |
Hanako Henry, Tze-man Ko, Yiheng Xu, Shaoning Yao |
2015-04-28 |
$3,749,000 |
| 8896069 |
Semiconductor devices having tensile and/or compressive stress and methods of manufacturing |
Haining Yang |
2014-11-25 |
$4,405,000 |
| 8889504 |
Semiconductor devices having tensile and/or compressive stress and methods of manufacturing |
Haining Yang |
2014-11-18 |
$3,249,000 |
| 8853746 |
CMOS devices with stressed channel regions, and methods for fabricating the same |
Xiangdong Chen, Kenneth T. Settlemyer, Jr., Haining Yang |
2014-10-07 |
$3,450,000 |
| 8765602 |
Doping of copper wiring structures in back end of line processing |
Daniel C. Edelstein, Tze-man Ko, Andrew H. Simon, Wei-Tsu Tseng |
2014-07-01 |
$3,868,000 |
| 8697528 |
Method of forming a planar field effect transistor structure with recesses for epitaxially deposited source/drain regions |
— |
2014-04-15 |
$9,702,000 |
| 8685806 |
Silicon-on-insulator substrate with built-in substrate junction |
Junedong Lee, Dominic J. Schepis |
2014-04-01 |
$5,095,000 |
| 8623673 |
Structure and method for detecting defects in BEOL processing |
Tze-man Ko, Yiheng Xu, Shaoning Yao |
2014-01-07 |
$4,729,000 |
| 8482009 |
Silicon-on-insulator substrate with built-in substrate junction |
Junedong Lee, Dominic J. Schepis |
2013-07-09 |
$6,470,000 |
| 8377785 |
Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure |
— |
2013-02-19 |
$3,959,000 |
| 8362531 |
Method of patterning semiconductor structure and structure thereof |
James J. Toomey |
2013-01-29 |
$3,874,000 |
| 8293631 |
Semiconductor devices having tensile and/or compressive stress and methods of manufacturing |
Haining Yang |
2012-10-23 |
$6,526,000 |
| 8198194 |
Methods of forming p-channel field effect transistors having SiGe source/drain regions |
Jong-ho Yang, Hyung-Rae Lee, Jin-Ping Han, Chung Woh Lai, Henry K. Utomo |
2012-06-12 |
$5,600,000 |
| 8159031 |
SOI substrates and SOI devices, and methods for forming the same |
Zhijiong Luo, Haining Yang |
2012-04-17 |
$5,847,000 |
| 8110464 |
SOI protection for buried plate implant and DT bottle ETCH |
Herbert L. Ho, Ravi M. Todi |
2012-02-07 |
$8,176,000 |
| 8063449 |
Semiconductor devices and methods of manufacture thereof |
Jin-Ping Han, Henry K. Utomo, Rajendran Krishnasamy |
2011-11-22 |
$22,584,000 |
