| 8963283 |
Method of fabricating isolated capacitors and structure thereof |
Oh-Jung Kwon, Paul C. Parries, Dominic J. Schepis |
2015-02-24 |
$3,851,000 |
| 8940617 |
Method of fabricating isolated capacitors and structure thereof |
Oh-Jung Kwon, Paul C. Parries, Dominic J. Schepis |
2015-01-27 |
$4,313,000 |
| 8716776 |
Method of fabricating isolated capacitors and structure thereof |
Oh-Jung Kwon, Paul C. Parries, Dominic J. Schepis |
2014-05-06 |
$5,370,000 |
| 8685806 |
Silicon-on-insulator substrate with built-in substrate junction |
Thomas W. Dyer, Dominic J. Schepis |
2014-04-01 |
$5,095,000 |
| 8652925 |
Method of fabricating isolated capacitors and structure thereof |
Oh-Jung Kwon, Paul C. Parries, Dominic J. Schepis |
2014-02-18 |
$4,910,000 |
| 8637958 |
Structure and method for forming isolation and buried plate for trench capacitor |
Abhishek Dube, Subramanian S. Iyer, Babar A. Khan, Oh-Jung Kwon, Paul C. Parries +4 more |
2014-01-28 |
$3,630,000 |
| 8536650 |
Strained ultra-thin SOI transistor formed by replacement gate |
Kangguo Cheng |
2013-09-17 |
$4,204,000 |
| 8482009 |
Silicon-on-insulator substrate with built-in substrate junction |
Thomas W. Dyer, Dominic J. Schepis |
2013-07-09 |
$6,470,000 |
| 8354675 |
Enhanced capacitance deep trench capacitor for EDRAM |
Oh-Jung Kwon, Chengwen Pei, Geng Wang |
2013-01-15 |
$8,874,000 |
| 8298908 |
Structure and method for forming isolation and buried plate for trench capacitor |
Abhishek Dube, Subramanian S. Iyer, Babar A. Khan, Oh-Jung Kwon, Paul C. Parries +4 more |
2012-10-30 |
|
| 8128749 |
Fabrication of SOI with gettering layer |
Devendra K. Sadana, Dominic J. Schepis |
2012-03-06 |
$5,131,000 |
| 7955940 |
Silicon-on-insulator substrate with built-in substrate junction |
Thomas W. Dyer, Dominic J. Schepis |
2011-06-07 |
$3,978,000 |
| 7955909 |
Strained ultra-thin SOI transistor formed by replacement gate |
Kangguo Cheng |
2011-06-07 |
$3,978,000 |
| 7955950 |
Semiconductor-on-insulator substrate with a diffusion barrier |
Dominic J. Schepis, Jeffrey W. Sleight, Zhibin Ren |
2011-06-07 |
$3,978,000 |
| 7867893 |
Method of forming an SOI substrate contact |
Haining Yang, Ramachandra Divakaruni, Byeong Y. Kim, Gaku Sudo |
2011-01-11 |
$2,856,000 |
| 7492008 |
Control of buried oxide in SIMOX |
Stephen Fox, Neena Garg, Kenneth J. Giewont, Siegfried Maurer, Dan Moy +2 more |
2009-02-17 |
$3,763,000 |
| 7348633 |
Hybrid crystallographic surface orientation substrate having one or more SOI regions and/or bulk semiconductor regions |
Devendra K. Sadana, Dominic J. Schepis, Ghavam G. Shahidi |
2008-03-25 |
$5,860,000 |
| 6967376 |
Divot reduction in SIMOX layers |
Stephen Fox, Neena Garg, Kenneth J. Giewont, Devendra K. Sadana |
2005-11-22 |
$6,353,000 |
| 6784072 |
Control of buried oxide in SIMOX |
Stephen Fox, Neena Garg, Kenneth J. Giewont, Siegfried Maurer, Dan Moy +2 more |
2004-08-31 |
$4,873,000 |
| 6531375 |
Method of forming a body contact using BOX modification |
Kenneth J. Giewont, Eric Adler, Neena Garg, Michael Hargrove, Charles W. Koburger, III +2 more |
2003-03-11 |
$18,284,000 |
| 6495429 |
Controlling internal thermal oxidation and eliminating deep divots in SIMOX by chlorine-based annealing |
Michael E. Adamcek, Anthony G. Domenicucci, Stephen Fox, Neena Garg, Kenneth J. Giewont +2 more |
2002-12-17 |
$17,155,000 |
| 6447379 |
Carrier including a multi-volume diaphragm for polishing a semiconductor wafer and a method therefor |
Robert D. Gromko, Stephen C. Schultz, John D. Herb, James Lee |
2002-09-10 |
$1,444,000 |
| 5885147 |
Apparatus for conditioning polishing pads |
Douglas Kreager |
1999-03-23 |
$2,888,000 |
