Haining Yang — 276 Patents at IBM

Haining Yang has been granted 276 US patents while listed as an inventor at IBM. The first was granted in 1999 and the most recent in February 2025. Haining Yang ranks #1,586 of 4,157,543 US inventors in our database (top 0.04%). Patent records list Haining Yang in San Diego, CA, US.

Issued Patents All Time

Showing 1–25 of 276 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12224347	P-type field effect transistor (PFET) on a silicon germanium (Ge) buffer layer to increase Ge in the PFET source and drain to increase compression of the PFET channel and method of fabrication	Bin Yang, Xia Li	2025-02-11
12206001	FinFET semiconductor device	Bin Yang, Xia Li	2025-01-21
12124085	Multiple wavelength band optical switching unit	Brian Robertson, Daping Chu	2024-10-22
12068238	Back-end-of-line (BEOL) high resistance (Hi-R) conductor layer in a metal oxide metal (MOM) capacitor	John Jianhong Zhu, Junjing Bao	2024-08-20	$15,229,000
12051534	Three dimensional (3D) vertical spiral inductor and transformer	Xia Li, Bin Yang	2024-07-30	$20,449,000
11901427	Gate contact isolation in a semiconductor	Junjing Bao	2024-02-13	$17,908,000
11901434	Semiconductor having a source/drain contact with a single inner spacer	Junjing Bao, Youseok Suh	2024-02-13	$17,908,000
11744059	Fin field-effect transistor (FinFET) static random access memory (SRAM) having pass-gate transistors with offset gate contact regions	Xia Li, Bin Yang	2023-08-29	$8,546,000
11687766	Artificial neural networks with precision weight for artificial intelligence	Periannan Chidambaram	2023-06-27	$11,184,000
11545483	Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid integration	Xia Li, Bin Yang	2023-01-03	$13,583,000
11418861	Optical switching unit	Brian Robertson, Daping Chu	2022-08-16
11404414	Integrated device comprising transistor coupled to a dummy gate contact	Xia Li, Bin Yang	2022-08-02	$22,443,000
11393819	Semiconductor device implemented with buried rails	Xia Li, Bin Yang	2022-07-19	$22,075,000
11335683	Device channel profile structure	ChihWei Kuo, Junjing Bao	2022-05-17	$28,775,000
11295991	Complementary cell circuits employing isolation structures for defect reduction and related methods of fabrication	Junjing Bao	2022-04-05	$22,074,000
11222952	Gate all around transistors with high charge mobility channel materials	Bin Yang, Xia Li	2022-01-11	$39,750,000
11164952	Transistor with insulator	Ye Lu, Junjing Bao	2021-11-02	$33,449,000
11145649	Semiconductor devices with low parasitic capacitance	Junjing Bao	2021-10-12	$22,617,000
11139315	Ferroelectric transistor	Xia Li, Bin Yang	2021-10-05	$25,896,000
11121132	Gate-cut isolation structure and fabrication method	—	2021-09-14	$21,186,000
11056487	Single diffusion break local interconnect	—	2021-07-06	$25,290,000
11038344	Shunt power rail with short line effect	John Jianhong Zhu, Xiangdong Chen, Kern Rim	2021-06-15	$25,529,000
11011602	Circuits employing adjacent low-k dummy gate to a field-effect transistor (FET) to reduce FET source/drain parasitic capacitance, and related fabrication methods	—	2021-05-18	$30,492,000
10996399	Space-division multiplexed reconfigurable, wavelength selective switch	Daping Chu	2021-05-04
10950609	Gate-all-around (GAA) and fin field-effect transistor (FinFet) hybrid static random-access memory (SRAM)	—	2021-03-16	$35,385,000

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Haining Yang — 276 Patents

Issued Patents All Time

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