Issued Patents All Time
Showing 25 most recent of 276 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12224347 | P-type field effect transistor (PFET) on a silicon germanium (Ge) buffer layer to increase Ge in the PFET source and drain to increase compression of the PFET channel and method of fabrication | Bin Yang, Xia Li | 2025-02-11 |
| 12206001 | FinFET semiconductor device | Bin Yang, Xia Li | 2025-01-21 |
| 12124085 | Multiple wavelength band optical switching unit | Brian Robertson, Daping Chu | 2024-10-22 |
| 12068238 | Back-end-of-line (BEOL) high resistance (Hi-R) conductor layer in a metal oxide metal (MOM) capacitor | John Jianhong Zhu, Junjing Bao | 2024-08-20 |
| 12051534 | Three dimensional (3D) vertical spiral inductor and transformer | Xia Li, Bin Yang | 2024-07-30 |
| 11901427 | Gate contact isolation in a semiconductor | Junjing Bao | 2024-02-13 |
| 11901434 | Semiconductor having a source/drain contact with a single inner spacer | Junjing Bao, Youseok Suh | 2024-02-13 |
| 11744059 | Fin field-effect transistor (FinFET) static random access memory (SRAM) having pass-gate transistors with offset gate contact regions | Xia Li, Bin Yang | 2023-08-29 |
| 11687766 | Artificial neural networks with precision weight for artificial intelligence | Periannan Chidambaram | 2023-06-27 |
| 11545483 | Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid integration | Xia Li, Bin Yang | 2023-01-03 |
| 11418861 | Optical switching unit | Brian Robertson, Daping Chu | 2022-08-16 |
| 11404414 | Integrated device comprising transistor coupled to a dummy gate contact | Xia Li, Bin Yang | 2022-08-02 |
| 11393819 | Semiconductor device implemented with buried rails | Xia Li, Bin Yang | 2022-07-19 |
| 11335683 | Device channel profile structure | ChihWei Kuo, Junjing Bao | 2022-05-17 |
| 11295991 | Complementary cell circuits employing isolation structures for defect reduction and related methods of fabrication | Junjing Bao | 2022-04-05 |
| 11222952 | Gate all around transistors with high charge mobility channel materials | Bin Yang, Xia Li | 2022-01-11 |
| 11164952 | Transistor with insulator | Ye Lu, Junjing Bao | 2021-11-02 |
| 11145649 | Semiconductor devices with low parasitic capacitance | Junjing Bao | 2021-10-12 |
| 11139315 | Ferroelectric transistor | Xia Li, Bin Yang | 2021-10-05 |
| 11121132 | Gate-cut isolation structure and fabrication method | — | 2021-09-14 |
| 11056487 | Single diffusion break local interconnect | — | 2021-07-06 |
| 11038344 | Shunt power rail with short line effect | John Jianhong Zhu, Xiangdong Chen, Kern Rim | 2021-06-15 |
| 11011602 | Circuits employing adjacent low-k dummy gate to a field-effect transistor (FET) to reduce FET source/drain parasitic capacitance, and related fabrication methods | — | 2021-05-18 |
| 10996399 | Space-division multiplexed reconfigurable, wavelength selective switch | Daping Chu | 2021-05-04 |
| 10950609 | Gate-all-around (GAA) and fin field-effect transistor (FinFet) hybrid static random-access memory (SRAM) | — | 2021-03-16 |