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Home › Fin field-effect transistor (FinFET) static random access memory (SRAM) having pass-gate transistors with offset gate contact regions

Fin field-effect transistor (FinFET) static random access memory (SRAM) having pass-gate transistors with offset gate contact regions

US Patent 11744059 · Granted Aug 29, 2023

Estimated economic value: $8,546,000 ⓘ

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