Home› P-type field effect transistor (PFET) on a silicon germanium (Ge) buffer layer to increase Ge in the PFET source and drain to increase compression of the PFET channel and method of fabrication
P-type field effect transistor (PFET) on a silicon germanium (Ge) buffer layer to increase Ge in the PFET source and drain to increase compression of the PFET channel and method of fabrication