Issued Patents All Time
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11950412 | Gate fringing effect based channel formation for semiconductor device | Sung-Yong Chung, Ya-Fen Lin, Yi-Ching Wu | 2024-04-02 |
| 11901434 | Semiconductor having a source/drain contact with a single inner spacer | Junjing Bao, Haining Yang | 2024-02-13 |
| 11444201 | Leakage current reduction in polysilicon-on-active-edge structures | Youn Sung Choi, Kwanyong LIM, Hyunwoo Park | 2022-09-13 |
| 11251189 | Gate fringing effect based channel formation for semiconductor device | Sung-Yong Chung, Ya-Fen Lin, Yi-Ching Wu | 2022-02-15 |
| 11069699 | NAND memory cell string having a stacked select gate structure and process for forming same | Ming Sang Kwan, Shenqing Fang, Michael A. Van Buskirk | 2021-07-20 |
| 10833017 | Contact for semiconductor device | Yanxiang Liu, Haining Yang, Jihong Choi, Junjing Bao | 2020-11-10 |
| 10756101 | NAND memory cell string having a stacked select gate structure and process for for forming same | Ming Sang Kwan, Shenqing Fang, Michael A. Van Buskirk | 2020-08-25 |
| 10622370 | System and method for manufacturing self-aligned STI with single poly | Tim Thurgate, Shenqing Fang, Kuo-Tung Chang, Meng Ding, Hidehiko Shiraiwa +5 more | 2020-04-14 |
| 10600774 | Systems and methods for fabrication of gated diodes with selective epitaxial growth | Youn Sung Choi, Kwanyong LIM | 2020-03-24 |
| 10566341 | NAND memory cell string having a stacked select gate structure and process for for forming same | Ming Sang Kwan, Shenqing Fang, Michael A. Van Buskirk | 2020-02-18 |
| 10361215 | NAND memory cell string having a stacked select gate structure and process for for forming same | Ming Sang Kwan, Shenqing Fang, Michael A. Van Buskirk | 2019-07-23 |
| 10297606 | Gate fringing effect based channel formation for semiconductor device | Sung-Yong Chung, Ya-Fen Lin, Yi-Ching Wu | 2019-05-21 |
| 10038004 | NAND memory cell string having a stacked select gate structure and process for for forming same | Ming Sang Kwan, Shenqing Fang, Michael A. Van Buskirk | 2018-07-31 |
| 9570458 | Gate fringing effect based channel formation for semiconductor device | Sung-Yong Chung, Ya-Fen Lin, Yi-Ching Wu | 2017-02-14 |
| 9514824 | Partial local self boosting for NAND | Ya-Fen Lin, Colin S. Bill, Takao Akaogi | 2016-12-06 |
| 9449690 | Modified local segmented self-boosting of memory cell channels | Swaroop Kaza, Di Li, Sameer Haddad | 2016-09-20 |
| 9276007 | System and method for manufacturing self-aligned STI with single poly | Tim Thurgate, Shenqing Fang, Kuo-Tung Chang, Meng Ding, Hidehiko Shiraiwa +5 more | 2016-03-01 |
| 9190531 | Flash memory cell with flair gate | Meng Ding, Shenqing Fang, Kuo-Tung Chang | 2015-11-17 |
| 8809936 | Memory cell system with multiple nitride layers | Lei Xue, Rinji Sugino, Hidehiko Shiraiwa, Meng Ding, Shenqing Fang +1 more | 2014-08-19 |
| 8692310 | Gate fringing effect based channel formation for semiconductor device | Sung-Yong Chung, Ya-Fen Lin, Yi-Ching Wu | 2014-04-08 |
| 8642441 | Self-aligned STI with single poly for manufacturing a flash memory device | Tim Thurgate, Shenqing Fang, Kuo-Tung Chang, Meng Ding, Hidehiko Shiraiwa +5 more | 2014-02-04 |
| 8638609 | Partial local self boosting for NAND | Ya-Fen Lin, Colin S. Bill, Takao Akaogi | 2014-01-28 |
| 8367537 | Flash memory cell with a flair gate | Meng Ding, Shenqing Fang, Kuo-Tung Chang | 2013-02-05 |
| 8208296 | Apparatus and method for extended nitride layer in a flash memory | Timothy Thurgate, Shenqing Fang, Kuo-Tung Chang | 2012-06-26 |
| 8143661 | Memory cell system with charge trap | Shenqing Fang, Rinji Sugino, Jayendra D. Bhakta, Takashi Orimoto, Hiroyuki Nansei +8 more | 2012-03-27 |