Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12224031 | Semiconductor memory device | Jung-Dal Choi, Jung Shik JANG, Jin Kook Kim, Dong Sun Sheen, Se Young Oh +3 more | 2025-02-11 |
| 12148501 | Semiconductor memory device | Jung-Dal Choi, Jung Shik JANG, Jin Kook Kim, Dong Sun Sheen, Se Young Oh +3 more | 2024-11-19 |
| 11950412 | Gate fringing effect based channel formation for semiconductor device | Youseok Suh, Ya-Fen Lin, Yi-Ching Wu | 2024-04-02 |
| 11545190 | Semiconductor memory device | Jung-Dal Choi, Jung Shik JANG, Jin Kook Kim, Dong Sun Sheen, Se Young Oh +3 more | 2023-01-03 |
| 11251189 | Gate fringing effect based channel formation for semiconductor device | Youseok Suh, Ya-Fen Lin, Yi-Ching Wu | 2022-02-15 |
| 10672480 | Memory device and operating method thereof | Hee Youl Lee, Kyoung Cheol KWON, Dong Hun Lee, Min Kyu Jeong | 2020-06-02 |
| 10490284 | Memory device and operating method thereof | Hee Youl Lee, Kyoung Cheol KWON, Dong Hun Lee, Min Kyu Jeong | 2019-11-26 |
| 10297606 | Gate fringing effect based channel formation for semiconductor device | Youseok Suh, Ya-Fen Lin, Yi-Ching Wu | 2019-05-21 |
| 9734913 | Data storage device and method of driving the same | Jong Ho Lee, Ho Jung KANG, Nag Yong CHOI, Byeong Il Han, Kyoung-Jin Park | 2017-08-15 |
| 9679660 | Semiconductor memory device and operating method thereof | Sung-Ho Bae, Ji Seon Kim | 2017-06-13 |
| 9589647 | Semiconductor device with improved programming reliability | Jung Ryul Ahn, Ji Hyun Seo | 2017-03-07 |
| 9570458 | Gate fringing effect based channel formation for semiconductor device | Youseok Suh, Ya-Fen Lin, Yi-Ching Wu | 2017-02-14 |
| 9196624 | Leakage reducing writeline charge protection circuit | Bradley Marc Davis, Mark Randolph, Hidehiko Shiraiwa | 2015-11-24 |
| 8885418 | Adaptive double pulse BCF programming | Uday Chandrasekhar, Jianmin Huang, Masaaki Higashitani | 2014-11-11 |
| 8692310 | Gate fringing effect based channel formation for semiconductor device | Youseok Suh, Ya-Fen Lin, Yi-Ching Wu | 2014-04-08 |
| 8559255 | Controlling AC disturbance while programming | Zhizheng Liu, Yugi Mizuguchi, Xuguang Wang, Yi He, Ming Sang Kwan +4 more | 2013-10-15 |
| 8264898 | Controlling AC disturbance while programming | Zhizheng Liu, Yugi Mizuguchi, Xuguang Wang, Yi He, Ming Sang Kwan +4 more | 2012-09-11 |
| 7995386 | Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb | Yuji Mizuguchi, Mark Randolph, Darlene Hamilton, Yi He, Zhizheng Liu +9 more | 2011-08-09 |
| 7986562 | Controlling AC disturbance while programming | Zhizheng Liu, Yugi Mizuguchi, Xuguang Wang, Yi He, Ming Sang Kwan +4 more | 2011-07-26 |
| 7952938 | Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory | Gulzar Kathawala, Wei Zheng, Zhizheng Liu, Timothy Thurgate, Kuo-Tung Chang +2 more | 2011-05-31 |
| 7916601 | Optical recording/reproducing write strategy method, medium, and apparatus | Joo-youp Kim, Seung-Bum Lee, Jong-Hoon Lee | 2011-03-29 |
| 7746698 | Programming in memory devices using source bitline voltage bias | Zhizheng Liu, An-Chung Chen, Wei Zheng, Kuo-Tung Chang, Gulzar Ahmed Kathawala +1 more | 2010-06-29 |
| 7746705 | Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory | Gulzar Ahmed Kathawala, Wei Zheng, Zhizheng Liu, Timothy Thurgate, Kuo-Tung Chang +2 more | 2010-06-29 |
| 7679967 | Controlling AC disturbance while programming | Zhizheng Liu, Yugi Mizuguchi, Xuguang Wang, Yi He, Ming Sang Kwan +4 more | 2010-03-16 |
| 7659569 | Work function engineering for FN erase of a memory device with multiple charge storage elements in an undercut region | Wei Zheng, Kuo-Tung Chang, Ashot Melik-Martirosian | 2010-02-09 |