Issued Patents All Time
Showing 1–25 of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12148834 | FinFET structure having a gate contact above a metal gate and straddling the boundary of an active region | Xinfang Liu, Miao Xu | 2024-11-19 |
| 12080999 | Railway vehicle and storage battery circuit breaker box thereof | Mu-Chen Tan, Junbin Mu, Xiaojun Li, Jiecun Geng, Fanwei Jiang +1 more | 2024-09-03 |
| 12073863 | Memory and electronic device | Yue Pan, Stephane Badel | 2024-08-27 |
| 12068202 | Integrated circuit device and preparation method thereof | Sunhom Steve Paak, Xiaolong Ma, Daxiang Wang, Zanfeng Chen, Yu Xia +2 more | 2024-08-20 |
| 11957062 | Memory | Wen Yang | 2024-04-09 |
| 11511712 | Train compartment brake control method, train compartment, and train | Shujun Chen, Jiaying Qin, Zhonghua Liu, Yingyu Zhang, De Quan +5 more | 2022-11-29 |
| 10833017 | Contact for semiconductor device | Haining Yang, Youseok Suh, Jihong Choi, Junjing Bao | 2020-11-10 |
| 10181403 | Layout effect mitigation in FinFET | Da Yang, Jun Yuan, Kern Rim | 2019-01-15 |
| 10170315 | Semiconductor device having local buried oxide | Min-hwa Chi | 2019-01-01 |
| 10141306 | Systems, methods, and apparatus for improved finFETs | Haining Yang | 2018-11-27 |
| 10134734 | Fin field effect transistor (FET) (FinFET) complementary metal oxide semiconductor (CMOS) circuits employing single and double diffusion breaks for increased performance | Jun Yuan, Kern Rim | 2018-11-20 |
| 10062763 | Method and apparatus for selectively forming nitride caps on metal gate | Junjing Bao, Haining Yang, Jeffrey Junhao Xu | 2018-08-28 |
| 10018515 | Transistor temperature sensing | Haining Yang, Kern Rim | 2018-07-10 |
| 10003302 | Modified tunneling field effect transistors and fabrication methods | Min-hwa Chi | 2018-06-19 |
| 9997360 | Method for mitigating layout effect in FINFET | Da Yang, Jun Yuan, Kern Rim | 2018-06-12 |
| 9978738 | System, apparatus, and method for N/P tuning in a fin-FET | Haining Yang | 2018-05-22 |
| 9853112 | Device and method to connect gate regions separated using a gate cut | Stanley Seungchul Song, Kern Rim | 2017-12-26 |
| 9673757 | Modified tunneling field effect transistors and fabrication methods | Min-hwa Chi | 2017-06-06 |
| 9666709 | Non-planar semiconductor structure with preserved isolation region | Xiaoli He, Jerome Ciavatti, Myung-Hee Nam | 2017-05-30 |
| 9653466 | FinFET device and method of making the same | Haining Yang | 2017-05-16 |
| 9653281 | Structure and method for tunable memory cells including fin field effect transistors | Haining Yang | 2017-05-16 |
| 9640538 | Embedded DRAM in replacement metal gate technology | Min-hwa Chi | 2017-05-02 |
| 9607988 | Off-center gate cut | Stanley Seungchul Song | 2017-03-28 |
| 9601578 | Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS) | Jerome Ciavatti, Vara Govindeswara Reddy Vakada | 2017-03-21 |
| 9577040 | FinFET conformal junction and high epi surface dopant concentration method and device | Peijie Feng, Jianwei Peng, Shesh Mani Pandey, Francis Benistant | 2017-02-21 |