Issued Patents All Time
Showing 26–50 of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9570442 | Applying channel stress to Fin field-effect transistors (FETs) (FinFETs) using a self-aligned single diffusion break (SDB) isolation structure | Jun Yuan | 2017-02-14 |
| 9559176 | FinFET conformal junction and abrupt junction with reduced damage method and device | Peijie Feng, Shesh Mani Pandey, Jianwei Peng, Francis Benistant | 2017-01-31 |
| 9537007 | FinFET with cut gate stressor | Haining Yang | 2017-01-03 |
| 9472554 | Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage | Michael Hargrove, Christian Gruensfelder | 2016-10-18 |
| 9437740 | Epitaxially forming a set of fins in a semiconductor device | Johannes M. van Meer, Michael Hargrove, Christian Gruensfelder, Srikanth B. Samavedam | 2016-09-06 |
| 9419126 | Integrated circuits and methods for fabricating integrated circuits with active area protection | Xiaodong Yang, Jin Ping Liu, Xusheng Wu | 2016-08-16 |
| 9406752 | FinFET conformal junction and high EPI surface dopant concentration method and device | Peijie Feng, Jianwei Peng, Shesh Mani Pandey, Francis Benistant | 2016-08-02 |
| 9397162 | FinFET conformal junction and abrupt junction with reduced damage method and device | Peijie Feng, Shesh Mani Pandey, Jianwei Peng, Francis Benistant | 2016-07-19 |
| 9397191 | Methods of making a self-aligned channel drift device | Jerome Ciavatti | 2016-07-19 |
| 9385126 | Silicon-on-insulator finFET with bulk source and drain | Min-hwa Chi | 2016-07-05 |
| 9252272 | FinFET semiconductor device having local buried oxide | Min-hwa Chi | 2016-02-02 |
| 9202911 | Self-aligned channel drift device and methods of making such a device | Jerome Ciavatti | 2015-12-01 |
| 9142674 | FINFET devices having a body contact and methods of forming the same | Michael Hargrove, Christian Gruensfelder | 2015-09-22 |
| 9142316 | Embedded selector-less one-time programmable non-volatile memory | Min-hwa Chi, Anurag Mittal | 2015-09-22 |
| 9142640 | Containment structure for epitaxial growth in non-planar semiconductor structure | Xusheng Wu, Xiaodong Yang, Jin Ping Liu | 2015-09-22 |
| 9136330 | Shallow trench isolation | Johannes M. van Meer, Xiaodong Yang, Manfred Eller | 2015-09-15 |
| 9087743 | Silicon-on-insulator finFET with bulk source and drain | Min-hwa Chi | 2015-07-21 |
| 9087860 | Fabricating fin-type field effect transistor with punch-through stop region | Edmund K. Banghart, Shesh Mani Pandey | 2015-07-21 |
| 9076791 | MOS transistor operated as OTP cell with gate dielectric operating as an e-fuse element | Min-hwa Chi | 2015-07-07 |
| 9064888 | Forming tunneling field-effect transistor with stacking fault and resulting device | Min-hwa Chi | 2015-06-23 |
| 9064868 | Advanced faraday shield for a semiconductor device | Vara Govindeswara Reddy Vakada, Jerome Ciavatti | 2015-06-23 |
| 9034737 | Epitaxially forming a set of fins in a semiconductor device | Johannes M. van Meer, Michael Hargrove, Christian Gruensfelder, Srikanth B. Samavedam | 2015-05-19 |
| 9007803 | Integrated circuits with programmable electrical connections and methods for fabricating the same | Min-hwa Chi | 2015-04-14 |
| 8956948 | Shallow trench isolation extension | Bin Yang | 2015-02-17 |
| 8846476 | Methods of forming multiple N-type semiconductor devices with different threshold voltages on a semiconductor substrate | Manfred Eller, Johannes M. van Meer | 2014-09-30 |