Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855198 | Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearity | Chenjie TANG, Ye Lu, Junjing Bao | 2023-12-26 |
| 11545555 | Gate-all-around (GAA) transistors with shallow source/drain regions and methods of fabricating the same | Stanley Seungchul Song, Kern Rim | 2023-01-03 |
| 11502079 | Integrated device comprising a CMOS structure comprising well-less transistors | Stanley Seungchul Song, Hyunwoo Park | 2022-11-15 |
| 11437379 | Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits | Stanley Seungchul Song, Deepak Sharma, Bharani Chava, Hyeokjin Lim, Seung H. Kang +6 more | 2022-09-06 |
| 11411092 | Field effect transistor (FET) comprising inner spacers and voids between channels | Junjing Bao, Ye Lu, Chenjie TANG | 2022-08-09 |
| 11387335 | Optimized contact structure | Junjing Bao, Jun Yuan | 2022-07-12 |
| 11380685 | Semiconductor device with superlattice fin | Junjing Bao, Ye Lu, Chenjie TANG | 2022-07-05 |
| 11257917 | Gate-all-around (GAA) transistors with additional bottom channel for reduced parasitic capacitance and methods of fabrication | Jun Yuan, Stanley Seungchul Song, Kern Rim | 2022-02-22 |
| 11189617 | Gate-all-around devices with reduced parasitic capacitance | Ye Lu, Junjing Bao, Chenjie TANG | 2021-11-30 |
| 10763364 | Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methods | Stanley Seungchul Song, Kern Rim, Da Yang | 2020-09-01 |
| 10700204 | Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methods | Stanley Seungchul Song, Kern Rim, Da Yang | 2020-06-30 |
| 10686031 | Finger metal-oxide-metal (FMOM) capacitor | Junjing Bao, Ye Lu, Giridhar Nallapati | 2020-06-16 |
| 9577040 | FinFET conformal junction and high epi surface dopant concentration method and device | Jianwei Peng, Yanxiang Liu, Shesh Mani Pandey, Francis Benistant | 2017-02-21 |
| 9559176 | FinFET conformal junction and abrupt junction with reduced damage method and device | Yanxiang Liu, Shesh Mani Pandey, Jianwei Peng, Francis Benistant | 2017-01-31 |
| 9406752 | FinFET conformal junction and high EPI surface dopant concentration method and device | Jianwei Peng, Yanxiang Liu, Shesh Mani Pandey, Francis Benistant | 2016-08-02 |
| 9397162 | FinFET conformal junction and abrupt junction with reduced damage method and device | Yanxiang Liu, Shesh Mani Pandey, Jianwei Peng, Francis Benistant | 2016-07-19 |
| 8907378 | High electron mobility transistor with multiple channels | Koon Hoo Teo, Rui Ma | 2014-12-09 |
| 8624667 | High electron mobility transistors with multiple channels | Koon Hoo Teo, Chunjie Duan, Toshiyuki Oishi, Nakayama Masatoshi | 2014-01-07 |