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Francis Benistant

GP Globalfoundries Singapore Pte.: 9 patents #82 of 828Top 10%
Globalfoundries: 8 patents #444 of 4,424Top 15%
CM Chartered Semiconductor Manufacturing: 7 patents #90 of 840Top 15%
Micron: 6 patents #2,080 of 6,345Top 35%
NS National University Of Singapore: 2 patents #231 of 1,623Top 15%
📍 Singapore, ID: #1 of 5 inventorsTop 20%
Overall (All Time): #124,945 of 4,157,543Top 4%
30
Patents All Time

Issued Patents All Time

Showing 1–25 of 30 patents

Patent #TitleCo-InventorsDate
10164099 Device with diffusion blocking layer in source/drain region Shesh Mani Pandey, Pei Zhao, Baofu Zhu 2018-12-25
9997225 System and method for modular simulation of spin transfer torque magnetic random access memory devices Deepanjan Datta, Bhagawan Sahu 2018-06-12
9966433 Multiple-step epitaxial growth S/D regions for NMOS FinFET Zhiqing Li, Shesh Mani Pandey 2018-05-08
9947788 Device with diffusion blocking layer in source/drain region Shesh Mani Pandey, Pei Zhao, Baofu Zhu 2018-04-17
9871132 Extended drain metal-oxide-semiconductor transistor Kun Liu, Xiaoping Wang, Li Cao 2018-01-16
9673084 Isolation scheme for high voltage device Kun Liu, Ming-Shuan Li, Namchil Mun, Shiang Yang Ong, Purakh Raj Verma 2017-06-06
9577040 FinFET conformal junction and high epi surface dopant concentration method and device Peijie Feng, Jianwei Peng, Yanxiang Liu, Shesh Mani Pandey 2017-02-21
9559176 FinFET conformal junction and abrupt junction with reduced damage method and device Peijie Feng, Yanxiang Liu, Shesh Mani Pandey, Jianwei Peng 2017-01-31
9406752 FinFET conformal junction and high EPI surface dopant concentration method and device Peijie Feng, Jianwei Peng, Yanxiang Liu, Shesh Mani Pandey 2016-08-02
9397162 FinFET conformal junction and abrupt junction with reduced damage method and device Peijie Feng, Yanxiang Liu, Shesh Mani Pandey, Jianwei Peng 2016-07-19
9269770 Integrated circuit system with double doped drain transistor Yisuo Li, Gang Chen, Purakh Raj Verma, Hong-Seon Yang, Shao-fu Sanford Chu 2016-02-23
8994107 Semiconductor devices and methods of forming the semiconductor devices including a retrograde well El Mehdi Bazizi 2015-03-31
8860142 Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction Debora Chyiu Hyia Poon, Alex See, Benjamin Colombeau, Yun Ling Tan, Mei Sheng Zhou +1 more 2014-10-14
8354321 Method for fabricating semiconductor devices with reduced junction diffusion Benjamin Colombeau, Sai-Hooi Yeong, Bangun Indajang, Lap Chan 2013-01-15
8293544 Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction Debora Chyiu Hyia Poon, Alex See, Benjamin Colombeau, Yun Ling Tan, Mei Sheng Zhou +1 more 2012-10-23
8053340 Method for fabricating semiconductor devices with reduced junction diffusion Benjamin Colombeau, Sai-Hooi Yeong, Bangun Indajang, Lap Chan 2011-11-08
7888752 Structure and method to form source and drain regions over doped depletion regions King-Jien Chui, Ganesh Shamkar Samudra, Kian Meng Tee, Yisuo Li, Kum Woh Vincent Leong +1 more 2011-02-15
7573099 Semiconductor device layout and channeling implant process Yisuo Li, Xiaohong Jiang 2009-08-11
7271435 Modified source/drain re-oxidation method and system Paul Rudeck, Kelly Hurley 2007-09-18
7259072 Shallow low energy ion implantation into pad oxide for improving threshold voltage stability Yisuo Li, Kim Sik, Zhao Lun 2007-08-21
7253483 Semiconductor device layout and channeling implant process Yisuo Li, Xiaohong Jiang 2007-08-07
7202133 Structure and method to form source and drain regions over doped depletion regions King-Jien Chui, Ganesh Shamkar Samudra, Kian Meng Tee, Yisuo Li, Kum Woh Vincent Leong +1 more 2007-04-10
7101743 Low cost source drain elevation through poly amorphizing implant technology Yisuo Li, Kian Meng Tee, King-Jien Chui 2006-09-05
7037860 Modified source/drain re-oxidation method and system Paul Rudeck, Kelly Hurley 2006-05-02
6972236 Semiconductor device layout and channeling implant process Yisuo Li, Xiaohong Jiang 2005-12-06