Issued Patents All Time
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12369299 | Devices and methods for DRAM leakage reduction | Armin Saeedi Vahdat, John Hautala, Yan Zhang | 2025-07-22 |
| 12300494 | Ion implantation process to form punch through stopper | Yan Zhang, Naushad K. Variam | 2025-05-13 |
| 12230691 | Three dimensional device formation using early removal of sacrificial heterostructure layer | Yan Zhang, Sankuei Lin, Baonian Guo, Naushad K. Variam | 2025-02-18 |
| 12096622 | Directional etch for improved dual deck three-dimensional NAND architecture margin | Armin Saeedi Vahdat, John Hautala | 2024-09-17 |
| 11948832 | Bottom implant and airgap isolation for nanosheet semiconductor devices | Yan Zhang, Naushad K. Variam | 2024-04-02 |
| 11942361 | Semiconductor device cavity formation using directional deposition | Armin Saeedi Vahdat, Tristan Y. Ma, John Hautala, Naushad K. Variam | 2024-03-26 |
| 11778832 | Wordline contact formation in NAND devices | Armin Saeedi Vahdat, Tristan Y. Ma, John Hautala, Naushad K. Variam | 2023-10-03 |
| 11626284 | Method of forming a 2-dimensional channel material, using ion implantation | Keith Tatseun Wong, Hurshvardhan Srivastava, Srinivas D. Nemani, Rajesh Prasad | 2023-04-11 |
| 11424164 | Enhanced etch resistance for insulator layers implanted with low energy ions | Andrew Waite, Jae-Young Lee | 2022-08-23 |
| 11217491 | Replacement gate formation with angled etch and deposition | Min Gyu Sung, Naushad K. Variam, Sony Varghese, Jae-Young Lee | 2022-01-04 |
| 11205593 | Asymmetric fin trimming for fins of FinFET device | Min Gyu Sung | 2021-12-21 |
| 10971403 | Structure and method of forming fin device having improved fin liner | Min Gyu Sung, Naushad K. Variam, Sony Varghese, Jae-Young Lee | 2021-04-06 |
| 10720357 | Method of forming transistor device having fin cut regions | Min Gyu Sung, Naushad K. Variam, Sony Varghese, Jae-Young Lee, Jun Seok Lee | 2020-07-21 |
| 10692775 | Fin damage reduction during punch through implantation of FinFET device | Min Gyu Sung, Jae-Young Lee, Sony Varghese, Naushad K. Variam | 2020-06-23 |
| 10685865 | Method and device for power rail in a fin type field effect transistor | Min Gyu Sung, Sony Varghese, John Hautala | 2020-06-16 |
| 10686033 | Fin damage reduction during punch through implantation of FinFET device | Min Gyu Sung, Jae-Young Lee, Sony Varghese, Naushad K. Variam | 2020-06-16 |
| 10629741 | Method and device for shallow trench isolation in a fin type field effect transistors | Min Gyu Sung | 2020-04-21 |
| 10510870 | Techniques for forming device having etch-resistant isolation oxide | Min Gyu Sung, Sony Varghese, Jae-Young Lee | 2019-12-17 |
| 10510610 | Structure and method of forming fin device having improved fin liner | Min Gyu Sung, Naushad K. Variam, Sony Varghese, Jae-Young Lee | 2019-12-17 |
| 10403552 | Replacement gate formation with angled etch and deposition | Min Gyu Sung, Naushad K. Variam, Sony Varghese, Jae-Young Lee | 2019-09-03 |
| 10269663 | Critical dimensions variance compensation | Morgan Evans, Tristan Y. Ma, Kevin Anglin, Motoya Okazaki | 2019-04-23 |
| 10096488 | FinFET semiconductor structures and methods of fabricating same | Michael Ganz, Bingwu Liu, Sruthi Muralidharan | 2018-10-09 |
| 10090166 | Techniques for forming isolation structures in a substrate | Andrew Waite, Morgan Evans, Jae-Young Lee | 2018-10-02 |
| 9812336 | FinFET semiconductor structures and methods of fabricating same | Michael Ganz, Bingwu Liu, Sruthi Muralidharan | 2017-11-07 |
| 9437740 | Epitaxially forming a set of fins in a semiconductor device | Michael Hargrove, Christian Gruensfelder, Yanxiang Liu, Srikanth B. Samavedam | 2016-09-06 |