Issued Patents All Time
Showing 1–25 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12419080 | Semiconductor structure with wrapped-around backside contact | Ruilong Xie, Chanro Park, Kangguo Cheng, Julien Frougier | 2025-09-16 |
| 12402408 | Stacked FETS including devices with thick gate oxide | Ruilong Xie, Julien Frougier, Nicolas Loubet, Junli Wang, Ruqiang Bao +2 more | 2025-08-26 |
| 12396227 | Full wrap around backside contact | Ruilong Xie, Kisik Choi, Junli Wang, Julien Frougier | 2025-08-19 |
| 12389609 | Circuit architecture using transistors with dynamic dual functionality for logic and embedded memory drivers | Julien Frougier, Ruilong Xie, Kangguo Cheng, Heng Wu, Chanro Park | 2025-08-12 |
| 12362004 | Scaled 2T DRAM | Julien Frougier, Ruilong Xie, Chanro Park, Juntao Li | 2025-07-15 |
| 12324197 | Spin-based gate-all-around transistors | Julien Frougier, Kangguo Cheng, Ruilong Xie, Chanro Park, Andrew Gaul | 2025-06-03 |
| 12317514 | Resistive random-access memory structures with stacked transistors | Kangguo Cheng, Julien Frougier, Ruilong Xie, Chanro Park, Soon-Cheon Seo | 2025-05-27 |
| 12310064 | Isolation pillar structures for stacked device structures | Ruilong Xie, Julien Frougier, Kangguo Cheng, Chanro Park | 2025-05-20 |
| 12183740 | Stacked field-effect transistors | Ruilong Xie, Kangguo Cheng, Curtis S. Durfee, Jay William Strane, Julien Frougier +1 more | 2024-12-31 |
| 12150310 | Ferroelectric random-access memory cell | Kangguo Cheng, Julien Frougier, Ruilong Xie, Chanro Park | 2024-11-19 |
| 12004435 | Tunable resistive random access memory cell | Soon-Cheon Seo, Chanro Park | 2024-06-04 |
| 12004436 | RRAM with high work function cap | Soon-Cheon Seo, Takashi Ando, Chanro Park, Mary Claire Silvestre, Xuefeng Liu | 2024-06-04 |
| 11569242 | DRAM memory device having angled structures with sidewalls extending over bitlines | Sony Varghese | 2023-01-31 |
| 11456179 | Methods for forming semiconductor device having uniform fin pitch | — | 2022-09-27 |
| 11309220 | Methods, apparatus, and manufacturing system for self-aligned patterning of a vertical transistor | Chanro Park, Ruilong Xie | 2022-04-19 |
| 11217491 | Replacement gate formation with angled etch and deposition | Naushad K. Variam, Sony Varghese, Johannes M. van Meer, Jae-Young Lee | 2022-01-04 |
| 11205593 | Asymmetric fin trimming for fins of FinFET device | Johannes M. van Meer | 2021-12-21 |
| 11101183 | Gate spacer formation for scaled CMOS devices | Sony Varghese | 2021-08-24 |
| 11037788 | Integration of device regions | Sony Varghese | 2021-06-15 |
| 11018138 | Methods for forming dynamic random-access devices by implanting a drain through a spacer opening at the bottom of angled structures | Sony Varghese | 2021-05-25 |
| 10971403 | Structure and method of forming fin device having improved fin liner | Naushad K. Variam, Sony Varghese, Johannes M. van Meer, Jae-Young Lee | 2021-04-06 |
| 10930735 | Gate all around device and method of formation using angled ions | Sony Varghese, Anthony Renau, Morgan Evans, Joseph C. Olson | 2021-02-23 |
| 10923389 | Air-gap spacers for field-effect transistors | Chanro Park, Hoon Kim, Ruilong Xie | 2021-02-16 |
| 10903211 | Gate devices and methods of formation using angled ions | Anthony Renau, Sony Varghese, Morgan Evans, Naushad K. Variam, Tassie Andersen | 2021-01-26 |
| 10854510 | Titanium silicide formation in a narrow source-drain contact | Kwanyong LIM, Hiroaki Niimi | 2020-12-01 |