| 11444201 |
Leakage current reduction in polysilicon-on-active-edge structures |
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2022-09-13 |
| 11296083 |
Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) electrically coupled by integrated vertical FET-to-FET interconnects for complementary metal-oxide semiconductor (CMOS) cell circuits |
Ye Lu, Lixin Ge, Jun Chen |
2022-04-05 |
| 11145654 |
Field effect transistor (FET) comprising channels with silicon germanium (SiGe) |
Stanley Seungchul Song, Jun Yuan, Kern Rim |
2021-10-12 |
| 11075206 |
SRAM source-drain structure |
Youn Sung Choi, Ukjin Roh |
2021-07-27 |
| 10950488 |
Integration of finFET device |
Ryoung-Han Kim, Youn Sung Choi |
2021-03-16 |
| 10854510 |
Titanium silicide formation in a narrow source-drain contact |
Min Gyu Sung, Hiroaki Niimi |
2020-12-01 |
| 10600774 |
Systems and methods for fabrication of gated diodes with selective epitaxial growth |
Youn Sung Choi, Youseok Suh |
2020-03-24 |
| 9847333 |
Reducing risk of punch-through in FinFET semiconductor structure |
Murat Kerem Akarvardar |
2017-12-19 |
| 9779987 |
Titanium silicide formation in a narrow source-drain contact |
Min Gyu Sung, Hiroaki Niimi |
2017-10-03 |
