Issued Patents All Time
Showing 1–25 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431423 | Method for low-cost, high-bandwidth monolithic system integration beyond reticle limit | Hon-Sum Philip Wong | 2025-09-30 |
| 12293229 | Artificial intelligence accelerator device | Xiaoyu Sun, Xiaochen PENG | 2025-05-06 |
| 12205665 | Three dimensional memory device and method for manufacturing the same | Xiaochen PENG | 2025-01-21 |
| 11735515 | Method for low-cost, high-bandwidth monolithic system integration beyond reticle limit | Hon-Sum Philip Wong | 2023-08-22 |
| 10411010 | Tall single-fin FIN-type field effect transistor structures and methods | Ruilong Xie, Andreas Knorr, Lars Liebmann, Nigel G. Cave | 2019-09-10 |
| 10297597 | Composite isolation structures for a fin-type field effect transistor | Min Gyu Sung, Ruilong Xie, Chanro Park | 2019-05-21 |
| 10217846 | Vertical field effect transistor formation with critical dimension control | Ruilong Xie, Steven Bentley, Min Gyu Sung, Chanro Park, Steven R. Soss +8 more | 2019-02-26 |
| 10163677 | Electrically insulated fin structure(s) with alternative channel materials and fabrication methods | Jody A. Fronheiser | 2018-12-25 |
| 10062617 | Method and structure for SRB elastic relaxation | Ruilong Xie, Andreas Knorr | 2018-08-28 |
| 10026659 | Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices | Ajey Poovannummoottil Jacob, Jody A. Fronheiser | 2018-07-17 |
| 9960257 | Common fabrication of multiple FinFETs with different channel heights | Jody A. Fronheiser, Ajey Poovannummoottil Jacob | 2018-05-01 |
| 9929157 | Tall single-fin fin-type field effect transistor structures and methods | Ruilong Xie, Andreas Knorr, Lars Liebmann, Nigel G. Cave | 2018-03-27 |
| 9882052 | Forming defect-free relaxed SiGe fins | Robert Judson Holt, Jinping Liu, Jody A. Fronheiser, Bharat Krishnan, Churamani Gaire +1 more | 2018-01-30 |
| 9881830 | Electrically insulated fin structure(s) with alternative channel materials and fabrication methods | Jody A. Fronheiser | 2018-01-30 |
| 9847333 | Reducing risk of punch-through in FinFET semiconductor structure | Kwanyong LIM | 2017-12-19 |
| 9842897 | Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide | Ajey Poovannummoottil Jacob | 2017-12-12 |
| 9716174 | Electrical isolation of FinFET active region by selective oxidation of sacrificial layer | Jody A. Fronheiser, Ajey Poovannummoottil Jacob | 2017-07-25 |
| 9679972 | Thin strain relaxed buffers with multilayer film stacks | Jody A. Fronheiser, Stephen W. Bedell, Joël KANYANDEKWE | 2017-06-13 |
| 9601383 | FinFET fabrication by forming isolation trenches prior to fin formation | — | 2017-03-21 |
| 9589849 | Methods of modulating strain in PFET and NFET FinFET semiconductor devices | Ajey Poovannummoottil Jacob, Bruce B. Doris, Ali Khakifirooz | 2017-03-07 |
| 9590040 | Methods of forming fins for a FinFET device by forming and replacing sacrificial fin structures with alternative materials | Ajey Poovannummoottil Jacob | 2017-03-07 |
| 9576857 | Method and structure for SRB elastic relaxation | Ruilong Xie, Andreas Knorr | 2017-02-21 |
| 9570588 | Methods of forming transistor structures including forming channel material after formation processes to prevent damage to the channel material | Steven Bentley | 2017-02-14 |
| 9564486 | Self-aligned dual-height isolation for bulk FinFET | Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser, Ajey Poovannummoottil Jacob +2 more | 2017-02-07 |
| 9536990 | Methods of forming replacement fins for a FinFET device using a targeted thickness for the patterned fin etch mask | Jody A. Fronheiser, Bruce B. Doris | 2017-01-03 |