Issued Patents All Time
Showing 1–25 of 76 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431423 | Method for low-cost, high-bandwidth monolithic system integration beyond reticle limit | Murat Kerem Akarvardar | 2025-09-30 |
| 12144184 | Tunnel junction selector MRAM | Mauricio Manfrini | 2024-11-12 |
| 11967375 | Memory cell with built-in amplifying function, memory device and method using the same | Hung-Li Chiang, Chao-Ching Cheng, Tzu-Chiang Chen, Yu-Sheng Chen | 2024-04-23 |
| 11901004 | Memory array, memory structure and operation method of memory array | Kerem Akarvardar, Win-San Khwa, Rawan Naous, Jin Cai, Meng-Fan Chang | 2024-02-13 |
| 11735515 | Method for low-cost, high-bandwidth monolithic system integration beyond reticle limit | Murat Kerem Akarvardar | 2023-08-22 |
| 11737284 | Tunnel junction selector MRAM | Mauricio Manfrini | 2023-08-22 |
| 11721376 | Memory device, operation method of memory device and operation method of memory circuit | Hung-Li Chiang, Chung-Te Lin, Shy-Jay Lin, Tzu-Chiang Chen, Ming-Yuan Song | 2023-08-08 |
| 11342015 | Memory device and memory circuit | Hung-Li Chiang, Chung-Te Lin, Shy-Jay Lin, Tzu-Chiang Chen, Ming-Yuan Song | 2022-05-24 |
| 11211426 | Tunnel junction selector MRAM | Mauricio Manfrini | 2021-12-28 |
| 11183236 | Memory cell with built-in amplifying function, memory device and method using the same | Hung-Li Chiang, Chao-Ching Cheng, Tzu-Chiang Chen, Yu-Sheng Chen | 2021-11-23 |
| 11177435 | Cross-point memory-selector composite pillar stack structures and methods of forming the same | Xinyu BAO | 2021-11-16 |
| 10672604 | Metal oxide-resistive memory using two-dimensional edge electrodes | Seunghyun Lee, Joon Yong Sohn | 2020-06-02 |
| 8637374 | Method of fabricating self-aligned nanotube field effect transistor | Joerg Appenzeller, Phaedon Avouris, Kevin K. Chan, Philip G. Collins, Richard Martel | 2014-01-28 |
| 8377789 | Field-enhanced programmable resistance memory cell | Gerhard Ingmar Meijer, Chung H. Lam | 2013-02-19 |
| 8138491 | Self-aligned nanotube field effect transistor | Joerg Appenzeller, Phaedon Avouris, Kevin K. Chan, Philip G. Collins, Richard Martel | 2012-03-20 |
| 8119466 | Self-aligned process for nanotube/nanowire FETs | Phaedon Avouris, Roy A. Carruthers, Jia Chen, Christopher G. M. M. Detavernier, Christian Lavoie | 2012-02-21 |
| 8003453 | Self-aligned process for nanotube/nanowire FETs | Phaedon Avouris, Roy A. Carruthers, Jia Chen, Christopher G. M. M. Detavernier, Christian Lavoie | 2011-08-23 |
| 7928420 | Phase change tip storage cell | David V. Horak, Chung H. Lam | 2011-04-19 |
| 7897960 | Self-aligned nanotube field effect transistor | Joerg Appenzeller, Phaedon Avouris, Kevin K. Chan, Philip G. Collins, Richard Martel | 2011-03-01 |
| 7795068 | Method of making integrated circuit (IC) including at least one storage cell | David V. Horak, Chung H. Lam | 2010-09-14 |
| 7791141 | Field-enhanced programmable resistance memory cell | Gerhard Ingmar Meijer, Chung H. Lam | 2010-09-07 |
| 7791110 | Integrated circuit having gates and active regions forming a regular grating | Leland Chang | 2010-09-07 |
| 7635856 | Vertical nanotube field effect transistor | Joerg Appenzeller, Phaedon Avouris, Kevin K. Chan, Philip G. Collins, Richard Martel | 2009-12-22 |
| 7598516 | Self-aligned process for nanotube/nanowire FETs | Phaedon Avouris, Roy A. Carruthers, Jia Chen, Christophe Detavernier, Christian Lavoie | 2009-10-06 |
| 7485891 | Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory | Hendrik F. Hamann, Chung H. Lam, Michelle L. Steen | 2009-02-03 |