CL

Chung-Te Lin

TSMC: 298 patents #34 of 12,232Top 1%
Overall (All Time): #1,319 of 4,157,543Top 1%
298
Patents All Time

Issued Patents All Time

Showing 1–25 of 298 patents

Patent #TitleCo-InventorsDate
12432971 Transistor including a hydrogen-diffusion barrier and methods for forming the same Min Dai, Wei-Gang Chiu, I-Cheng Chang, Cheng-Yi Wu, Han-Ting Tsai +1 more 2025-09-30
12426380 Integrated circuit having angled conductive feature Tung-Heng Hsieh, Ting-Wei Chiang, Hui-Zhong Zhuang, Li-Chun Tien, Sheng-Hsiung Wang 2025-09-23
12414326 Thin film transistor featuring variable thickness glue layer with tapered end Ya-Ling Lee, Wei-Gang Chiu, Han-Ting Tsai 2025-09-09
12408347 Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines Chih Hsuan Cheng, Chieh-Fang Chen, Sheng-Chen Wang, Chieh-Yi Shen, Han-Jong Chia +4 more 2025-09-02
12402358 Thin film transistor including a compositionally-modulated active region and methods for forming the same Wu-Wei Tsai, Po-Ting Lin, Hai-Ching Chen 2025-08-26
12389607 Bipolar selector with independently tunable threshold voltages Sheng-Chih Lai, Min Cao, Randy B. Osborne 2025-08-12
12382640 Memory device and method for fabricating the same Ya-Ling Lee, Wei-Gang Chiu, Yen-Chieh Huang, Han-Ting Tsai, Tsann Lin +1 more 2025-08-05
12376311 Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same Meng-Han Lin, Han-Jong Chia, Yi-Ching Liu, Chia-En Huang, Sheng-Chen Wang +1 more 2025-07-29
12376310 Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof Yu-Wei Jiang, TsuChing Yang, Sheng-Chih Lai, Feng-Cheng Yang 2025-07-29
12376347 Ferroelectric memory device and method of forming the same Kuo-Chang Chiang, Yu-Chuan Shih, Chun-Chieh Lu, Po-Ting Lin, Hai-Ching Chen +2 more 2025-07-29
12369307 Access transistors in a dual gate line configuration and methods for forming the same Ming-Yen Chuang, Chia-Yu Ling, Katherine H. Chiang 2025-07-22
12363912 Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory device Yen-Chieh Huang, Hai-Ching Chen 2025-07-15
12363911 Semiconductor structure and method for forming thereof Yu-Wei Jiang, Sheng-Chih Lai, Feng-Cheng Yang 2025-07-15
12363906 3D lateral patterning via selective deposition for ferroelectric devices Song-Fu Liao, Kuo-Chang Chiang, Hai-Ching Chen 2025-07-15
12354634 Transistorless memory cell Katherine H. Chiang, Min Cao, Yuh-Jier Mii, Sheng-Chih Lai 2025-07-08
12356707 Semiconductor device Wei-Yuan Lu, Feng-Cheng Yang 2025-07-08
12349368 Memory device including a semiconducting metal oxide fin transistor and methods of forming the same Yong-Jie Wu, Yen-Chung Ho, Hui-Hsien Wei, Chia-Jung Yu, Pin-Cheng Hsu +1 more 2025-07-01
12349362 High selectivity isolation structure for improving effectiveness of 3D memory fabrication Tsu Ching Yang, Feng-Cheng Yang, Sheng-Chih Lai, Yu-Wei Jiang, Kuo-Chang Chiang +2 more 2025-07-01
12342727 Magnetoresistive random-access memory (MRAM) structure for improving process control and method of fabricating thereof Hsiang-Lun Kao, Chen-Chiu Huang, Chien-Hua Huang 2025-06-24
12342539 Protective liner layers in 3D memory structure Tsu Ching Yang, Sheng-Chih Lai, Yu-Wei Jiang, Kuo-Chang Chiang, Hung-Chang Sun +2 more 2025-06-24
12336180 Memory cell array with increased source bias voltage Chen-Jun Wu, Sun Yi Chang, Sheng-Chih Lai 2025-06-17
12334129 Ferroelectric memory operation bias and power domains Katherine H. Chiang 2025-06-17
12324161 Annealed seed layer to improve ferroelectric properties of memory layer Song-Fu Liao, Rainer Yen-Chieh Huang, Hai-Ching Chen 2025-06-03
12324164 Alignment mark for MRAM device and method Wei-De Ho, Lan-Hsin Chiang, Chien-Hua Huang, Yung-Yu Wang, Sheng-Yuan Chang +1 more 2025-06-03
12317541 Semiconductor device and manufacturing method thereof Yu-Wei Jiang, Sheng-Chih Lai, Feng-Cheng Yang 2025-05-27