Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12363906 | 3D lateral patterning via selective deposition for ferroelectric devices | Kuo-Chang Chiang, Hai-Ching Chen, Chung-Te Lin | 2025-07-15 |
| 12324161 | Annealed seed layer to improve ferroelectric properties of memory layer | Rainer Yen-Chieh Huang, Hai-Ching Chen, Chung-Te Lin | 2025-06-03 |
| 12289890 | Method of fabricating transistor structure | Kuo-Chang Chiang, Hai-Ching Chen, Chung-Te Lin | 2025-04-29 |
| 12150309 | Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure | Yen-Chieh Huang, Po-Ting Lin, Hai-Ching Chen, Sai-Hooi Yeong, Yu-Ming Lin +1 more | 2024-11-19 |
| 12094935 | Method of selective film deposition and semiconductor feature made by the method | Hai-Ching Chen, Chung-Te Lin | 2024-09-17 |
| 11917831 | Annealed seed layer to improve ferroelectric properties of memory layer | Rainer Yen-Chieh Huang, Hai-Ching Chen, Chung-Te Lin | 2024-02-27 |
| 11908936 | Double gate ferroelectric field effect transistor devices and methods for forming the same | Yen-Chieh Huang, Po-Ting Lin, Hai-Ching Chen, Sai-Hooi Yeong, Yu-Ming Lin +1 more | 2024-02-20 |
| 11817498 | Ferroelectric field effect transistor devices and methods for forming the same | Yen-Chieh Huang, Po-Ting Lin, Hai-Ching Chen, Yu-Ming Lin | 2023-11-14 |
| 11810956 | In-situ thermal annealing of electrode to form seed layer for improving FeRAM performance | Yen-Chieh Huang, Po-Ting Lin, Hai-Ching Chen, Chung-Te Lin | 2023-11-07 |
| 11690228 | Annealed seed layer to improve ferroelectric properties of memory layer | Rainer Yen-Chieh Huang, Hai-Ching Chen, Chung-Te Lin | 2023-06-27 |
| 11652148 | Method of selective film deposition and semiconductor feature made by the method | Hai-Ching Chen, Chung-Te Lin | 2023-05-16 |
| 11527649 | Ferroelectric field effect transistor devices and methods for forming the same | Yen-Chieh Huang, Po-Ting Lin, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin | 2022-12-13 |