Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12324161 | Annealed seed layer to improve ferroelectric properties of memory layer | Song-Fu Liao, Hai-Ching Chen, Chung-Te Lin | 2025-06-03 |
| 12274068 | Method of forming ferroelectric memory device | Han-Ting Tsai, Tsann Lin, Kuo-Chang Chiang, Min Dai, Chung-Te Lin | 2025-04-08 |
| 12238932 | Ferroelectric memory device, manufacturing method of the ferroelectric memory device and semiconductor chip | Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin | 2025-02-25 |
| 12232329 | Stacked ferroelectric structure | Hai-Ching Chen, Chung-Te Lin | 2025-02-18 |
| 12207474 | Stacked ferroelectric structure | Hai-Ching Chen, Chung-Te Lin | 2025-01-21 |
| 12154965 | Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device | Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin | 2024-11-26 |
| 12127411 | Cocktail layer over gate dielectric layer of FET FeRAM | Hai-Ching Chen, Chung-Te Lin | 2024-10-22 |
| 12114507 | Capping layer over FET FeRAM to increase charge mobility | Hai-Ching Chen, Chung-Te Lin | 2024-10-08 |
| 11917831 | Annealed seed layer to improve ferroelectric properties of memory layer | Song-Fu Liao, Hai-Ching Chen, Chung-Te Lin | 2024-02-27 |
| 11818896 | Cocktail layer over gate dielectric layer of FET FeRAM | Hai-Ching Chen, Chung-Te Lin | 2023-11-14 |
| 11778914 | Organic gate TFT-type stress sensors and method of making and using the same | Hai-Ching Chen | 2023-10-03 |
| 11769815 | Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device | Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin | 2023-09-26 |
| 11729990 | Capping layer over FET FeRAM to increase charge mobility | Hai-Ching Chen, Chung-Te Lin | 2023-08-15 |
| 11706928 | Memory device and method for fabricating the same | Hai-Ching Chen, Chung-Te Lin | 2023-07-18 |
| 11690228 | Annealed seed layer to improve ferroelectric properties of memory layer | Song-Fu Liao, Hai-Ching Chen, Chung-Te Lin | 2023-06-27 |
| 11653501 | Ferroelectric memory device, manufacturing method of the ferroelectric memory device and semiconductor chip | Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin | 2023-05-16 |
| 11581334 | Cocktail layer over gate dielectric layer of FET FeRAM | Hai-Ching Chen, Chung-Te Lin | 2023-02-14 |
| 11508755 | Stacked ferroelectric structure | Hai-Ching Chen, Chung-Te Lin | 2022-11-22 |