Issued Patents All Time
Showing 25 most recent of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8927057 | Graphene formation utilizing solid phase carbon sources | Ageeth A. Bol, Jack O. Chu, Alfred Grill, Christian Lavoie, Katherine L. Saenger +1 more | 2015-01-06 |
| 8154130 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Christophe Detavernier, Simon Gaudet, Christian Lavoie, Huiling Shang | 2012-04-10 |
| 8125082 | Reduction of silicide formation temperature on SiGe containing substrates | Cyril Cabral, Jr., Jia Chen, Christopher G. M. M. Detavernier, James M. E. Harper, Christian Lavoie | 2012-02-28 |
| 8119466 | Self-aligned process for nanotube/nanowire FETs | Phaedon Avouris, Jia Chen, Christopher G. M. M. Detavernier, Christian Lavoie, Hon-Sum Philip Wong | 2012-02-21 |
| 8003453 | Self-aligned process for nanotube/nanowire FETs | Phaedon Avouris, Jia Chen, Christopher G. M. M. Detavernier, Christian Lavoie, Hon-Sum Philip Wong | 2011-08-23 |
| 7784669 | Method and process for reducing undercooling in a lead-free tin-rich solder alloy | Gareth G. Hougham, Kamalesh K. Srivastava, Sung Kwon Kang, Da-Yuan Shih, Brian R. Sundlof +4 more | 2010-08-31 |
| 7703661 | Method and process for reducing undercooling in a lead-free tin-rich solder alloy | Gareth G. Hougham, Kamalesh K. Srivastava, Sung Kwon Kang, Da-Yuan Shih, Brian R. Sundlof +4 more | 2010-04-27 |
| 7682968 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Christophe Detavernier, Simon Gaudet, Christian Lavoie, Huiling Shang | 2010-03-23 |
| 7598516 | Self-aligned process for nanotube/nanowire FETs | Phaedon Avouris, Jia Chen, Christophe Detavernier, Christian Lavoie, Hon-Sum Philip Wong | 2009-10-06 |
| 7517795 | Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation | Cedrik Y. Cole, Christophe Detavernier, Christian Lavoie, Kenneth P. Rodbell | 2009-04-14 |
| 7449782 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Christophe Detavernier, Simon Gaudet, Christian Lavoie, Huiling Shang | 2008-11-11 |
| 7384868 | Reduction of silicide formation temperature on SiGe containing substrates | Cyril Cabral, Jr., Jia Chen, Christophe Detavernier, James M. E. Harper, Christian Lavoie | 2008-06-10 |
| 7271486 | Retarding agglomeration of Ni monosilicide using Ni alloys | Cyril Cabral, Jr., Christophe Detavernier, James M. E. Harper, Christian Lavoie | 2007-09-18 |
| 7247946 | On-chip Cu interconnection using 1 to 5 nm thick metal cap | John Bruley, Lynne M. Gignac, Chao-Kun Hu, Eric G. Liniger, Sandra G. Malhotra +1 more | 2007-07-24 |
| 7119012 | Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation | CEDRIK COIA, Christophe Detavernier, Christian Lavoie, Kenneth P. Rodbell | 2006-10-10 |
| 7102234 | Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy | Cyril Cabral, Jr., James M. E. Harper, Christian Lavoie, Ronnen Andrew Roy, Yun-Yu Wang | 2006-09-05 |
| 7098476 | Multilayer interconnect structure containing air gaps and method for making | Katherina Babich, Timothy J. Dalton, Alfred Grill, Jeffrey Hedrick, Christopher V. Jahnes +4 more | 2006-08-29 |
| 7081676 | Structure for controlling the interface roughness of cobalt disilicide | Paul D. Agnello, Cyril Cabral, Jr., James M. E. Harper, Christian Lavoie, Kirk D. Peterson +4 more | 2006-07-25 |
| 6972250 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Cyril Cabral, Jr., Kevin K. Chan, Jack O. Chu, Guy M. Cohen, Steven J. Koester +2 more | 2005-12-06 |
| 6905560 | Retarding agglomeration of Ni monosilicide using Ni alloys | Cyril Cabral, Jr., Christophe Detavernier, James M. E. Harper, Christian Lavoie | 2005-06-14 |
| 6815329 | Multilayer interconnect structure containing air gaps and method for making | Katherina Babich, Timothy J. Dalton, Alfred Grill, Jeffrey Hedrick, Christopher V. Jahnes +4 more | 2004-11-09 |
| 6809030 | Method and structure for controlling the interface roughness of cobalt disilicide | Paul D. Agnello, Cyril Cabral, Jr., James M. E. Harper, Christian Lavoie, Kirk D. Peterson +4 more | 2004-10-26 |
| 6753606 | Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy | Cyril Cabral, Jr., James M. E. Harper, Christian Lavoie, Ronnen Andrew Roy, Yun-Yu Wang | 2004-06-22 |
| 6690072 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Cyril Cabral, Jr., Kevin K. Chan, Jack O. Chu, Guy M. Cohen, Steven J. Koester +2 more | 2004-02-10 |
| 6503641 | Interconnects with Ti-containing liners | Cyril Cabral, Jr., James M. E. Harper, Chao-Kun Hu, Kim Y. Lee, Ismail C. Noyan +2 more | 2003-01-07 |