| 8927057 |
Graphene formation utilizing solid phase carbon sources |
Ageeth A. Bol, Jack O. Chu, Alfred Grill, Christian Lavoie, Katherine L. Saenger +1 more |
2015-01-06 |
$2,134,000 |
| 8154130 |
Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby |
Cyril Cabral, Jr., Christophe Detavernier, Simon Gaudet, Christian Lavoie, Huiling Shang |
2012-04-10 |
$19,969,000 |
| 8125082 |
Reduction of silicide formation temperature on SiGe containing substrates |
Cyril Cabral, Jr., Jia Chen, Christopher G. M. M. Detavernier, James M. E. Harper, Christian Lavoie |
2012-02-28 |
$6,579,000 |
| 8119466 |
Self-aligned process for nanotube/nanowire FETs |
Phaedon Avouris, Jia Chen, Christopher G. M. M. Detavernier, Christian Lavoie, Hon-Sum Philip Wong |
2012-02-21 |
$5,017,000 |
| 8003453 |
Self-aligned process for nanotube/nanowire FETs |
Phaedon Avouris, Jia Chen, Christopher G. M. M. Detavernier, Christian Lavoie, Hon-Sum Philip Wong |
2011-08-23 |
$4,386,000 |
| 7784669 |
Method and process for reducing undercooling in a lead-free tin-rich solder alloy |
Gareth G. Hougham, Kamalesh K. Srivastava, Sung Kwon Kang, Da-Yuan Shih, Brian R. Sundlof +4 more |
2010-08-31 |
$3,369,000 |
| 7703661 |
Method and process for reducing undercooling in a lead-free tin-rich solder alloy |
Gareth G. Hougham, Kamalesh K. Srivastava, Sung Kwon Kang, Da-Yuan Shih, Brian R. Sundlof +4 more |
2010-04-27 |
$6,715,000 |
| 7682968 |
Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby |
Cyril Cabral, Jr., Christophe Detavernier, Simon Gaudet, Christian Lavoie, Huiling Shang |
2010-03-23 |
$4,775,000 |
| 7598516 |
Self-aligned process for nanotube/nanowire FETs |
Phaedon Avouris, Jia Chen, Christophe Detavernier, Christian Lavoie, Hon-Sum Philip Wong |
2009-10-06 |
$19,573,000 |
| 7517795 |
Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation |
Cedrik Y. Cole, Christophe Detavernier, Christian Lavoie, Kenneth P. Rodbell |
2009-04-14 |
$4,368,000 |
| 7449782 |
Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby |
Cyril Cabral, Jr., Christophe Detavernier, Simon Gaudet, Christian Lavoie, Huiling Shang |
2008-11-11 |
$10,353,000 |
| 7384868 |
Reduction of silicide formation temperature on SiGe containing substrates |
Cyril Cabral, Jr., Jia Chen, Christophe Detavernier, James M. E. Harper, Christian Lavoie |
2008-06-10 |
$5,963,000 |
| 7271486 |
Retarding agglomeration of Ni monosilicide using Ni alloys |
Cyril Cabral, Jr., Christophe Detavernier, James M. E. Harper, Christian Lavoie |
2007-09-18 |
$6,075,000 |
| 7247946 |
On-chip Cu interconnection using 1 to 5 nm thick metal cap |
John Bruley, Lynne M. Gignac, Chao-Kun Hu, Eric G. Liniger, Sandra G. Malhotra +1 more |
2007-07-24 |
$9,916,000 |
| 7119012 |
Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation |
CEDRIK COIA, Christophe Detavernier, Christian Lavoie, Kenneth P. Rodbell |
2006-10-10 |
$5,276,000 |
| 7102234 |
Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy |
Cyril Cabral, Jr., James M. E. Harper, Christian Lavoie, Ronnen Andrew Roy, Yun-Yu Wang |
2006-09-05 |
$3,397,000 |
| 7098476 |
Multilayer interconnect structure containing air gaps and method for making |
Katherina Babich, Timothy J. Dalton, Alfred Grill, Jeffrey Hedrick, Christopher V. Jahnes +4 more |
2006-08-29 |
$3,832,000 |
| 7081676 |
Structure for controlling the interface roughness of cobalt disilicide |
Paul D. Agnello, Cyril Cabral, Jr., James M. E. Harper, Christian Lavoie, Kirk D. Peterson +4 more |
2006-07-25 |
$9,389,000 |
| 6972250 |
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device |
Cyril Cabral, Jr., Kevin K. Chan, Jack O. Chu, Guy M. Cohen, Steven J. Koester +2 more |
2005-12-06 |
$7,444,000 |
| 6905560 |
Retarding agglomeration of Ni monosilicide using Ni alloys |
Cyril Cabral, Jr., Christophe Detavernier, James M. E. Harper, Christian Lavoie |
2005-06-14 |
$9,509,000 |
| 6815329 |
Multilayer interconnect structure containing air gaps and method for making |
Katherina Babich, Timothy J. Dalton, Alfred Grill, Jeffrey Hedrick, Christopher V. Jahnes +4 more |
2004-11-09 |
$4,707,000 |
| 6809030 |
Method and structure for controlling the interface roughness of cobalt disilicide |
Paul D. Agnello, Cyril Cabral, Jr., James M. E. Harper, Christian Lavoie, Kirk D. Peterson +4 more |
2004-10-26 |
$17,835,000 |
| 6753606 |
Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy |
Cyril Cabral, Jr., James M. E. Harper, Christian Lavoie, Ronnen Andrew Roy, Yun-Yu Wang |
2004-06-22 |
$6,022,000 |
| 6690072 |
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device |
Cyril Cabral, Jr., Kevin K. Chan, Jack O. Chu, Guy M. Cohen, Steven J. Koester +2 more |
2004-02-10 |
$15,099,000 |
| 6503641 |
Interconnects with Ti-containing liners |
Cyril Cabral, Jr., James M. E. Harper, Chao-Kun Hu, Kim Y. Lee, Ismail C. Noyan +2 more |
2003-01-07 |
$16,905,000 |
