| 12414330 |
Multi-gate device including semiconductor fin between dielectric fins and method of fabrication thereof |
Ko-Cheng Liu, Chang-Miao Liu |
2025-09-09 |
|
| 12349384 |
Isolation structures in multi-gate semiconductor devices and methods of fabricating the same |
Xusheng Wu, Chang-Miao Liu |
2025-07-01 |
|
| 12148669 |
Semiconductor device with S/D bottom isolation and methods of forming the same |
Xusheng Wu, Ying-Keung Leung |
2024-11-19 |
$19,112,000 |
| 12132096 |
Semiconductor device structure with metal gate stack |
Xusheng Wu, Chang-Miao Liu |
2024-10-29 |
$21,319,000 |
| 11948998 |
Isolation structures in multi-gate semiconductor devices and methods of fabricating the same |
Xusheng Wu, Chang-Miao Liu |
2024-04-02 |
$12,522,000 |
| 11854896 |
Semiconductor device with S/D bottom isolation and methods of forming the same |
Xusheng Wu, Ying-Keung Leung |
2023-12-26 |
$1,986,000 |
| 11855155 |
Semiconductor device having contact feature and method of fabricating the same |
Xusheng Wu, Chang-Miao Liu, Ying-Keung Leung, Youbo Lin |
2023-12-26 |
$1,986,000 |
| 11837662 |
Devices with strained isolation features |
Xusheng Wu, Chang-Miao Liu |
2023-12-05 |
$10,399,000 |
| 11769819 |
Semiconductor device structure with metal gate stack |
Xusheng Wu, Chang-Miao Liu |
2023-09-26 |
$9,885,000 |
| 11444179 |
Isolation structures in multi-gate semiconductor devices and methods of fabricating the same |
Xusheng Wu, Chang-Miao Liu |
2022-09-13 |
$7,675,000 |
| 11430890 |
Integrated circuits with channel-strain liner |
Xusheng Wu, Chang-Miao Liu |
2022-08-30 |
$9,941,000 |
| 11302784 |
Semiconductor device having contact feature and method of fabricating the same |
Xusheng Wu, Chang-Miao Liu, Ying-Keung Leung, Youbo Lin |
2022-04-12 |
$11,948,000 |
| 11145650 |
Gate cut dielectric feature and method of forming the same |
Xusheng Wu, Chang-Miao Liu |
2021-10-12 |
$11,710,000 |
| 11121236 |
Semiconductor device with air spacer and stress liner |
Xusheng Wu, Chang-Miao Liu |
2021-09-14 |
$13,316,000 |
| 10879373 |
Structure and formation method of semiconductor device with metal gate stack |
Xusheng Wu, Chang-Miao Liu |
2020-12-29 |
$5,546,000 |
| 10868174 |
Devices with strained isolation features |
Xusheng Wu, Chang-Miao Liu |
2020-12-15 |
$3,031,000 |
| 10840375 |
Integrated circuits with channel-strain liner |
Xusheng Wu, Chang-Miao Liu |
2020-11-17 |
$11,687,000 |
| 10242980 |
Semiconductor fin isolation by a well trapping fin portion |
Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Ravikumar Ramachandran, Reinaldo Vega |
2019-03-26 |
$2,148,000 |
| 9536900 |
Forming fins of different semiconductor materials on the same substrate |
Ravikumar Ramachandran, Keith H. Tabakman, Henry K. Utomo, Reinaldo Vega |
2017-01-03 |
$6,197,000 |
| 9496258 |
Semiconductor fin isolation by a well trapping fin portion |
Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Ravikumar Ramachandran, Reinaldo Vega |
2016-11-15 |
$2,170,000 |
| 9190520 |
Strained finFET with an electrically isolated channel |
Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Dechao Guo, Myung-Hee Na +2 more |
2015-11-17 |
$674,000 |
| 9029913 |
Silicon-germanium fins and silicon fins on a bulk substrate |
Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Myung-Hee Na, Ravikumar Ramachandran |
2015-05-12 |
$6,873,000 |
| 8969969 |
High threshold voltage NMOS transistors for low power IC technology |
Victor Chan, Narasimhulu Kanike, Varadarajan Vidya, Jun Yuan, Roger A. Booth, Jr. |
2015-03-03 |
$3,627,000 |
| 8933528 |
Semiconductor fin isolation by a well trapping fin portion |
Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Ravikumar Ramachandran, Reinaldo Vega |
2015-01-13 |
$4,389,000 |
| 8928086 |
Strained finFET with an electrically isolated channel |
Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Dechao Guo, Myung-Hee Na +2 more |
2015-01-06 |
$2,134,000 |
