Issued Patents All Time
Showing 26–41 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8927361 | High threshold voltage NMOS transistors for low power IC technology | Roger A. Booth, Jr., Victor Chan, Narasimhulu Kanike, Varadarajan Vidya, Jun Yuan | 2015-01-06 |
| 8685818 | Method of forming a shallow trench isolation embedded polysilicon resistor | Ying Li, Henry K. Utomo | 2014-04-01 |
| 8592264 | Source-drain extension formation in replacement metal gate transistor device | Takashi Ando, Huiming Bu, Ramachandra Divakaruni, Bruce B. Doris, Chung-Hsun Lin +1 more | 2013-11-26 |
| 8558313 | Bulk substrate FET integrated on CMOS SOI | Anthony I. Chou, Arvind Kumar, Shreesh Narasimha, Ning Su | 2013-10-15 |
| 8232599 | Bulk substrate FET integrated on CMOS SOI | Anthony I. Chou, Arvind Kumar, Shreesh Narasimha, Ning Su | 2012-07-31 |
| 8154130 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Simon Gaudet, Christian Lavoie | 2012-04-10 |
| 8080838 | Contact scheme for FINFET structures with multiple FINs | Leland Chang, Wilfried E. Haensch, Meikei Ieong, Ghavam G. Shahidi | 2011-12-20 |
| 7790538 | Integration of strained Ge into advanced CMOS technology | Meikei Ieong, Jack O. Chu, Kathryn Guarini | 2010-09-07 |
| 7682968 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Simon Gaudet, Christian Lavoie | 2010-03-23 |
| 7521376 | Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment | Martin M. Frank, Steven J. Koester, John A. Ott | 2009-04-21 |
| 7449782 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Simon Gaudet, Christian Lavoie | 2008-11-11 |
| 7387925 | Integration of strained Ge into advanced CMOS technology | Meikei Ieong, Jack O. Chu, Kathryn Guarini | 2008-06-17 |
| 7244958 | Integration of strained Ge into advanced CMOS technology | Meikei Ieong, Jack O. Chu, Kathryn Guarini | 2007-07-17 |
| 7078300 | Thin germanium oxynitride gate dielectric for germanium-based devices | Evgeni Gousev, Christopher P. D'Emic, Paul Kozlowski | 2006-07-18 |
| 6803266 | Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby | Paul M. Solomon, Douglas A. Buchanan, Eduard A. Cartier, Kathryn Guarini, Fenton R. McFeely +1 more | 2004-10-12 |
| 6603181 | MOS device having a passivated semiconductor-dielectric interface | Paul M. Solomon, Douglas A. Buchanan, Eduard A. Cartier, Kathryn Guarini, Fenton R. McFeely +1 more | 2003-08-05 |