DB

Douglas A. Buchanan

IBM: 27 patents #3,831 of 70,183Top 6%
UM University Of Manitoba: 1 patents #101 of 312Top 35%
Overall (All Time): #138,732 of 4,157,543Top 4%
28
Patents All Time

Issued Patents All Time

Showing 25 most recent of 28 patents

Patent #TitleCo-InventorsDate
9925561 Capacitive micromachined ultrasonic transducer with multiple deflectable membranes Tahereh Arezoo Emadi 2018-03-27
7923743 Semiconductor structure including mixed rare earth oxide formed on silicon Nestor A. Bojarczuk, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson 2011-04-12
7887711 Method for etching chemically inert metal oxides Eduard A. Cartier, Evgeni Gousev, Harald Okorn-Schmidt, Katherine L. Saenger 2011-02-15
7863083 High temperature processing compatible metal gate electrode for pFETS and methods for fabrication Ricky S. Amos, Cyril Cabral, Jr., Alessandro C. Callegari, Supratik Guha, Hyungjun Kim +4 more 2011-01-04
7648864 Semiconductor structure including mixed rare earth oxide formed on silicon Nestor A. Bojarczuk, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson 2010-01-19
7432550 Semiconductor structure including mixed rare earth oxide formed on silicon Nestor A. Bojarczuk, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson 2008-10-07
7326610 Process options of forming silicided metal gates for advanced CMOS devices Ricky S. Amos, Cyril Cabral, Jr., Evgeni Gousev, Victor Ku, An Steegen 2008-02-05
7029966 Process options of forming silicided metal gates for advanced CMOS devices Ricky S. Amos, Cyril Cabral, Jr., Evgeni Gousev, Victor Ku, An Steegen 2006-04-18
6984591 Precursor source mixtures Deborah A. Neumayer 2006-01-10
6958506 High-dielectric constant insulators for feol capacitors Evgeni Gousev, Harald Okorn-Schmidt, Arne Ballantine, Eduard A. Cartier, Douglas D. Coolbaugh 2005-10-25
6887797 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer Evgeni Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp 2005-05-03
6852575 Method of forming lattice-matched structure on silicon and structure formed thereby Nestor A. Bojarczuk, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson 2005-02-08
6803266 Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby Paul M. Solomon, Eduard A. Cartier, Kathryn Guarini, Fenton R. McFeely, Huiling Shang +1 more 2004-10-12
6756646 Oxynitride gate dielectric and method of forming Matthew W. Copel, Patrick R. Varekamp 2004-06-29
6667207 High-dielectric constant insulators for FEOL capacitors Arne Ballantine, Eduard A. Cartier, Douglas D. Coolbaugh, Evgeni Gousev, Harald Okorn-Schmidt 2003-12-23
6603181 MOS device having a passivated semiconductor-dielectric interface Paul M. Solomon, Eduard A. Cartier, Kathryn Guarini, Fenton R. McFeely, Huiling Shang +1 more 2003-08-05
6566281 Nitrogen-rich barrier layer and structures formed Matthew W. Copel, Fenton R. McFeely, Patrick R. Varekamp, Mark Monroe Banaszak Holl, Kyle Erik Litz 2003-05-20
6511873 High-dielectric constant insulators for FEOL capacitors Arne Ballantine, Eduard A. Cartier, Douglas D. Coolbaugh, Evgeni Gousev, Harald Okorn-Schmidt 2003-01-28
6511876 High mobility FETS using A1203 as a gate oxide Alessandro C. Callegari, Michael A. Gribelyuk, Paul C. Jamison, Deborah A. Neumayer 2003-01-28
6444592 Interfacial oxidation process for high-k gate dielectric process integration Arne Ballantine, Eduard A. Cartier, Kevin K. Chan, Matthew W. Copel, Christopher P. D'Emic +6 more 2002-09-03
6436196 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer Evgeni Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp 2002-08-20
6346487 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer Evgeni Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp 2002-02-12
6245616 Method of forming oxynitride gate dielectric Matthew W. Copel, Patrick R. Varekamp 2001-06-12
6091122 Fabrication of mid-cap metal gates compatible with ultra-thin dielectrics Fenton R. McFeely, John J. Yurkas 2000-07-18
5789312 Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics Fenton R. McFeely, John J. Yurkas 1998-08-04