Issued Patents All Time
Showing 25 most recent of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11956975 | BEOL fat wire level ground rule compatible embedded artificial intelligence integration | Soon-Cheon Seo, Dexin Kong, Takashi Ando, Hiroyuki Miyazoe, Youngseok Kim +3 more | 2024-04-09 |
| 11700778 | Method for controlling the forming voltage in resistive random access memory devices | Steven P. Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando +3 more | 2023-07-11 |
| 11594596 | Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor | Takashi Ando, John G. Massey, Eduard A. Cartier | 2023-02-28 |
| 11309383 | Quad-layer high-k for metal-insulator-metal capacitors | Kisik Choi, Takashi Ando, John G. Massey, Eduard A. Cartier | 2022-04-19 |
| 11251285 | Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2022-02-15 |
| 11121209 | Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor | Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, Vijay Narayanan | 2021-09-14 |
| 11094801 | Oxide isolated fin-type field-effect transistors | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2021-08-17 |
| 11038013 | Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor | Takashi Ando, John G. Massey, Eduard A. Cartier | 2021-06-15 |
| 10991881 | Method for controlling the forming voltage in resistive random access memory devices | Steven P. Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando +3 more | 2021-04-27 |
| 10978551 | Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor | Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, Vijay Narayanan | 2021-04-13 |
| 10930566 | Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments | Lisa F. Edge, Hemanth Jagannathan, Vamsi K. Paruchuri | 2021-02-23 |
| 10892339 | Gate first technique in vertical transport FET using doped silicon gates with silicide | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee, Sanjay C. Mehta, Vijay Narayanan | 2021-01-12 |
| 10886362 | Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement | Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan | 2021-01-05 |
| 10833148 | Leakage current reduction in stacked metal-insulator-metal capacitors | Takashi Ando, Hemanth Jagannathan, John Rozen | 2020-11-10 |
| 10680083 | Oxide isolated fin-type field-effect transistors | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2020-06-09 |
| 10580881 | Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2020-03-03 |
| 10573565 | Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments | Lisa F. Edge, Hemanth Jagannathan, Vamsi K. Paruchuri | 2020-02-25 |
| 10529628 | Semiconductor device and method of forming the semiconductor device | Brent A. Anderson, Ruqiang Bao, Choonghyun Lee | 2020-01-07 |
| 10395989 | Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETs | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2019-08-27 |
| 10396146 | Leakage current reduction in stacked metal-insulator-metal capacitors | Takashi Ando, Hemanth Jagannathan, John Rozen | 2019-08-27 |
| 10381433 | Leakage current reduction in stacked metal-insulator-metal capacitors | Takashi Ando, Hemanth Jagannathan, John Rozen | 2019-08-13 |
| 10312147 | Multi-layer work function metal gates with similar gate thickness to achieve multi-VT for VFETs | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2019-06-04 |
| 10304746 | Complementary metal oxide semiconductor replacement gate high-K metal gate devices with work function adjustments | Lisa F. Edge, Hemanth Jagannathan, Vamsi K. Paruchuri | 2019-05-28 |
| 10297671 | Uniform threshold voltage for nanosheet devices | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee, Vijay Narayanan, Koji Watanabe | 2019-05-21 |
| 10297598 | Formation of full metal gate to suppress interficial layer growth | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee, Vijay Narayanan | 2019-05-21 |