TT

Takaaki Tsunomura

RE Renesas Electronics: 23 patents #78 of 4,529Top 2%
TL Tokyo Electron Limited: 3 patents #2,069 of 5,567Top 40%
RT Renesas Technology: 1 patents #1,991 of 3,337Top 60%
📍 Tokyo, NY: #45 of 99 inventorsTop 50%
Overall (All Time): #141,812 of 4,157,543Top 4%
27
Patents All Time

Issued Patents All Time

Showing 1–25 of 27 patents

Patent #TitleCo-InventorsDate
12261205 Semiconductor device Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2025-03-25
12080716 Method of manufacturing semiconductor device Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu, Hidekazu Oda 2024-09-03
11996448 Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layer Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2024-05-28
11700778 Method for controlling the forming voltage in resistive random access memory devices Steven P. Consiglio, Cory Wajda, Kandabara Tapily, Takashi Ando, Paul C. Jamison +3 more 2023-07-11
11695012 Semiconductor device and manufacturing method of the same Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu, Hidekazu Oda 2023-07-04
11658211 Semiconductor device and manufacturing method of the same Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2023-05-23
10991881 Method for controlling the forming voltage in resistive random access memory devices Steven P. Consiglio, Cory Wajda, Kandabara Tapily, Takashi Ando, Paul C. Jamison +3 more 2021-04-27
10756115 Semiconductor device and manufacturing method of the same Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu, Hidekazu Oda 2020-08-25
10510775 Semiconductor device and manufacturing method of the same Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu, Hidekazu Oda 2019-12-17
10461158 Semiconductor device and manufacturing method of the same Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2019-10-29
10410858 Selective film deposition using halogen deactivation Kandabara Tapily 2019-09-10
10411112 Semiconductor device with silicon layer containing carbon Toshiaki Iwamatsu 2019-09-10
10263078 Method of manufacturing a MISFET on an SOI substrate Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2019-04-16
9978839 Method of manufacturing a MOSFET on an SOI substrate Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2018-05-22
9935125 Semiconductor device and manufacturing method of the same Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu, Hidekazu Oda 2018-04-03
9773872 Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitance Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2017-09-26
9722044 Manufacturing method of semiconductor device with silicon layer containing carbon Toshiaki Iwamatsu 2017-08-01
9484433 Method of manufacturing a MISFET on an SOI substrate Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2016-11-01
9484456 Semiconductor device and manufacturing method of the same Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2016-11-01
9460936 Semiconductor device and method of manufacturing the same Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2016-10-04
9293347 Semiconductor device and method of manufacturing the same Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2016-03-22
9263346 Semiconductor device with silicon layer containing carbon Toshiaki Iwamatsu 2016-02-16
9196705 Method of manufacturing a misfet on an SOI substrate Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2015-11-24
9130039 Semiconductor device and manufacturing method of the same Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2015-09-08
8941178 MOS field-effect transistor formed on the SOI substrate Yoshiki Yamamoto, Hideki Makiyama, Toshiaki Iwamatsu 2015-01-27