HO

Hidekazu Oda

Mitsubishi Electric: 34 patents #359 of 25,717Top 2%
RE Renesas Electronics: 30 patents #50 of 4,529Top 2%
RT Renesas Technology: 12 patents #178 of 3,337Top 6%
Overall (All Time): #24,624 of 4,157,543Top 1%
76
Patents All Time

Issued Patents All Time

Showing 1–25 of 76 patents

Patent #TitleCo-InventorsDate
12198987 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2025-01-14
12080716 Method of manufacturing semiconductor device Takaaki Tsunomura, Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu 2024-09-03
11695012 Semiconductor device and manufacturing method of the same Takaaki Tsunomura, Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu 2023-07-04
10756115 Semiconductor device and manufacturing method of the same Takaaki Tsunomura, Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu 2020-08-25
10510775 Semiconductor device and manufacturing method of the same Takaaki Tsunomura, Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu 2019-12-17
10121705 Semiconductor device and method of manufacturing the same Hirofumi Shinohara, Toshiaki Iwamatsu 2018-11-06
10050122 Semiconductor device and manufacturing method of the same 2018-08-14
9966452 Semiconductor device having a field effect transistor formed on a silicon-on-insulator substrate and manufacturing method thereof 2018-05-08
9935125 Semiconductor device and manufacturing method of the same Takaaki Tsunomura, Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu 2018-04-03
9847417 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2017-12-19
9614081 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2017-04-04
9508598 Semiconductor device and manufacturing method of the same 2016-11-29
9443870 Semiconductor device and method of manufacturing the same Hirofumi Shinohara, Toshiaki Iwamatsu 2016-09-13
9412867 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2016-08-09
9349816 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2016-05-24
9287259 Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device Hirofumi Shinohara, Yukio Nishida, Katsuyuki Horita, Tomohiro Yamashita 2016-03-15
9214464 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2015-12-15
9209191 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2015-12-08
9184053 Semiconductor device and method of manufacturing the same Hirofumi Shinohara, Hiromasa Yoshimori, Toshiaki Iwamatsu 2015-11-10
9166041 Semiconductor device and method of manufacturing the same Hirofumi Shinohara, Toshiaki Iwamatsu 2015-10-20
8987081 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2015-03-24
8859360 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2014-10-14
8809186 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2014-08-19
8642418 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2014-02-04
8586475 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2013-11-19