Issued Patents All Time
Showing 1–25 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9484271 | Semiconductor device and method of manufacturing the same | Toshiaki Iwamatsu, Hideki Makiyama, Yoshiki Yamamoto | 2016-11-01 |
| 9343527 | Semiconductor device including an isolation film buried in a groove | Jiro Yugami, Toshiaki Iwamatsu, Hideki Makiyama, Yasuo Inoue, Yoshiki Yamamoto | 2016-05-17 |
| 9287259 | Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device | Hirofumi Shinohara, Yukio Nishida, Tomohiro Yamashita, Hidekazu Oda | 2016-03-15 |
| 9142567 | SOI SRAM having well regions with opposite conductivity | Toshiaki Iwamatsu, Hideki Makiyama | 2015-09-22 |
| 9029237 | Semiconductor device and method of manufacturing the same | Mahito Sawada, Tatsunori Kaneoka | 2015-05-12 |
| 9029951 | Semiconductor device having well regions with opposite conductivity | Toshiaki Iwamatsu, Hideki Makiyama | 2015-05-12 |
| 9024386 | Semiconductor device and method of manufacturing the same | Toshiaki Iwamatsu, Hideki Makiyama, Yoshiki Yamamoto | 2015-05-05 |
| 8975699 | Semiconductor device | Toshiaki Iwamatsu, Hideki Makiyama | 2015-03-10 |
| 8872267 | Semiconductor device | Toshiaki Iwamatsu, Hideki Makiyama | 2014-10-28 |
| 8592284 | Semiconductor device and manufacturing method thereof | Masato Ishibashi, Tomohiro Yamashita, Takaaki Tsunomura, Takashi Kuroi | 2013-11-26 |
| 8587085 | Semiconductor device with trench isolation having a diffusion preventing film and manufacturing method thereof | — | 2013-11-19 |
| 8536017 | Method of manufacturing semiconductor device | Masaru Kadoshima, Hiroshi Umeda, Tatsunori Kaneoka | 2013-09-17 |
| 8384187 | Semiconductor device with shallow trench isolation | Mahito Sawada, Tatsunori Kaneoka | 2013-02-26 |
| 8043918 | Semiconductor device and its manufacturing method | Takashi Kuroi, Masashi Kitazawa, Masato Ishibashi | 2011-10-25 |
| 7791163 | Semiconductor device and its manufacturing method | Takashi Kuroi, Masashi Kitazawa, Masato Ishibashi | 2010-09-07 |
| 7691713 | Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film | Yoshinori Tanaka, Heiji Kobayashi | 2010-04-06 |
| 7244655 | Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film | Yoshinori Tanaka, Heiji Kobayashi | 2007-07-17 |
| 6998319 | Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film | Yoshinori Tanaka, Heiji Kobayashi | 2006-02-14 |
| 6890837 | Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate | Takashi Kuroi, Katsuomi Shiozawa | 2005-05-10 |
| 6841440 | Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same | Takashi Kuroi, Syuichi Ueno | 2005-01-11 |
| 6777758 | Semiconductor device | Tomohiro Yamashita, Yoshinori Okumura | 2004-08-17 |
| 6744113 | Semiconductor device with element isolation using impurity-doped insulator and oxynitride film | Takashi Kuroi, Tomohiro Yamashita | 2004-06-01 |
| 6737315 | Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate | Takashi Kuroi, Katsuomi Shiozawa | 2004-05-18 |
| 6707099 | Semiconductor device and manufacturing method thereof | Katsuomi Shiozawa, Takashi Kuroi | 2004-03-16 |
| 6661066 | Semiconductor device including inversely tapered gate electrode and manufacturing method thereof | Takashi Kuroi, Yasuyoshi Itoh, Katsuomi Shiozawa | 2003-12-09 |