TK

Takashi Kuroi

Mitsubishi Electric: 46 patents #163 of 25,717Top 1%
RT Renesas Technology: 6 patents #492 of 3,337Top 15%
RE Renesas Electronics: 2 patents #1,855 of 4,529Top 45%
📍 Itami, JP: #27 of 1,436 inventorsTop 2%
Overall (All Time): #47,821 of 4,157,543Top 2%
54
Patents All Time

Issued Patents All Time

Showing 1–25 of 54 patents

Patent #TitleCo-InventorsDate
8592284 Semiconductor device and manufacturing method thereof Masato Ishibashi, Katsuyuki Horita, Tomohiro Yamashita, Takaaki Tsunomura 2013-11-26
8043918 Semiconductor device and its manufacturing method Katsuyuki Horita, Masashi Kitazawa, Masato Ishibashi 2011-10-25
7791163 Semiconductor device and its manufacturing method Katsuyuki Horita, Masashi Kitazawa, Masato Ishibashi 2010-09-07
6890837 Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate Katsuyuki Horita, Katsuomi Shiozawa 2005-05-10
6841440 Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same Syuichi Ueno, Katsuyuki Horita 2005-01-11
6744113 Semiconductor device with element isolation using impurity-doped insulator and oxynitride film Tomohiro Yamashita, Katsuyuki Horita 2004-06-01
6737315 Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate Katsuyuki Horita, Katsuomi Shiozawa 2004-05-18
6707099 Semiconductor device and manufacturing method thereof Katsuomi Shiozawa, Katsuyuki Horita 2004-03-16
6667221 Method of manufacturing semiconductor device Masashi Kitazawa, Tomohiro Yamashita 2003-12-23
6661066 Semiconductor device including inversely tapered gate electrode and manufacturing method thereof Yasuyoshi Itoh, Katsuyuki Horita, Katsuomi Shiozawa 2003-12-09
6577021 Static-type semiconductor memory device Chikayoshi Morishima, Yoshinori Okumura 2003-06-10
6548871 Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layer Katsuyuki Horita, Yasuyoshi Itoh, Katsuomi Shiozawa 2003-04-15
6541825 Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same Syuichi Ueno, Katsuyuki Horita 2003-04-01
6521527 Semiconductor device and method of fabricating the same Shuichi Ueno, Hidekazu Oda, Satoshi Shimizu 2003-02-18
6503799 Method of manufacturing semiconductor device Katsuyuki Horita, Shuuichi Ueno 2003-01-07
6498077 Semiconductor device and method of manufacturing same Shuuichi Ueno, Katsuyuki Horita 2002-12-24
6482718 Method of manufacturing semiconductor device Katsuomi Shiozawa, Katsuyuki Horita 2002-11-19
6399985 Semiconductor device Katsuyuki Horita, Yoshinori Okumura 2002-06-04
6383884 Method of manufacturing semiconductor device Katsuomi Shiozawa, Yasuyoshi Itoh, Katsuyuki Horita 2002-05-07
6372604 Method for forming a trench type element isolation structure and trench type element isolation structure Maiko Sakai, Katsuyuki Horita 2002-04-16
6323102 Method of manufacturing a semiconductor device Katsuyuki Horita, Maiko Sakai 2001-11-27
6303432 Method of manufacturing a semiconductor device Katsuyuki Horita, Yasuyoshi Itoh, Katsuomi Siozawa 2001-10-16
6300664 Semiconductor device and method of fabricating the same Shuichi Ueno, Hidekazu Oda, Satoshi Shimizu 2001-10-09
6274457 Method for manufacturing an isolation trench having plural profile angles Maiko Sakai, Katsuyuki Horita 2001-08-14
6268263 Method of forming a trench type element isolation in semiconductor substrate Maiko Sakai, Katsuyuki Horita 2001-07-31