Issued Patents All Time
Showing 26–50 of 54 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6265743 | Trench type element isolation structure | Maiko Sakai, Katsuyuki Horita | 2001-07-24 |
| 6232187 | Semiconductor device and manufacturing method thereof | Hirokazu Sayama | 2001-05-15 |
| 6218262 | Semiconductor device and method of manufacturing the same | Maiko Sakai, Katsuyuki Horita, Hirokazu Sayama | 2001-04-17 |
| 6180519 | Method of forming a layered wiring structure including titanium silicide | Hidekazu Oda | 2001-01-30 |
| 6162669 | Method of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layer | Katsuyuki Horita, Yoshinori Okumura | 2000-12-19 |
| 6150233 | Semiconductor device and method of manufacturing the same | Katsuyuki Horita, Maiko Sakai, Hiromichi Kobayashi | 2000-11-21 |
| 6127737 | Semiconductor device and manufacturing method thereof | Katsuyuki Horita, Maiko Sakai, Yasuo Inoue | 2000-10-03 |
| 6034409 | Isolation trench having plural profile angles | Maiko Sakai, Katsuyuki Horita | 2000-03-07 |
| 6017800 | Semiconductor device and method of fabricating thereof | Hirokazu Sayama, Maiko Sakai, Katsuyuki Horita | 2000-01-25 |
| 5956600 | Method of manufacturing a semiconductor device | Maiko Kobayashi | 1999-09-21 |
| 5950098 | Manufacturing method of a semiconductor device with a silicide layer | Hidekazu Oda | 1999-09-07 |
| 5932912 | Semiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layer | Katsuyuki Horita, Yoshinori Okumura | 1999-08-03 |
| 5889335 | Semiconductor device and method of manufacturing the same | Maiko Sakai, Katsuyuki Horita, Hirokazu Sayama | 1999-03-30 |
| 5801425 | Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure | Hidekazu Oda | 1998-09-01 |
| 5744845 | Complementary MOS field effect transistor with tunnel effect means | Hirokazu Sayama | 1998-04-28 |
| 5710438 | Semiconductor device with a silicide layer | Hidekazu Oda | 1998-01-20 |
| 5688701 | Method of making semiconductor device having a plurality of impurity layers | Maiko Kobayashi | 1997-11-18 |
| 5683923 | Semiconductor memory device capable of electrically erasing and writing information and a manufacturing method of the same | Masahiro Shimizu, Masayoshi Shirahata, Takehisa Yamaguchi | 1997-11-04 |
| 5616401 | Oxynitride film and its formation method, and method for forming an element isolation oxide film using the oxynitride film | Maiko Kobayashi | 1997-04-01 |
| 5578507 | Method of making a semiconductor device having buried doped and gettering layers | — | 1996-11-26 |
| 5554883 | Semiconductor device and manufacturing method therefor | — | 1996-09-10 |
| 5543647 | Semiconductor device having a plurality of impurity layers | Maiko Kobayashi | 1996-08-06 |
| 5538916 | Method of manufacturing semiconductor device isolation region | Maiko Kobayashi | 1996-07-23 |
| 5536665 | Method of manufacturing a semiconductor device with double structured well | Shigeki Komori, Masahide Inuishi | 1996-07-16 |
| 5488245 | Semiconductor memory device capable of electrically erasing and writing information | Masahiro Shimizu, Masayoshi Shirahata, Takehisa Yamaguchi | 1996-01-30 |