MI

Masahide Inuishi

Mitsubishi Electric: 22 patents #842 of 25,717Top 4%
📍 Kasai, JP: #364 of 5,842 inventorsTop 7%
Overall (All Time): #198,716 of 4,157,543Top 5%
22
Patents All Time

Issued Patents All Time

Showing 1–22 of 22 patents

Patent #TitleCo-InventorsDate
6420763 Semiconductor device having a retrograde well structure and method of manufacturing thereof Tomohiro Yamashita, Shigeki Komori 2002-07-16
5852327 Semiconductor device Shigeki Komori, Tomohiko YAMASHITA 1998-12-22
5648284 Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof Shigeru Kusunoki 1997-07-15
5554876 Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof Shigeru Kusunoki 1996-09-10
5536665 Method of manufacturing a semiconductor device with double structured well Shigeki Komori, Takashi Kuroi 1996-07-16
5446305 Semiconductor device with double structured well Shigeki Komori, Takashi Kuroi 1995-08-29
5369297 Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof Shigeru Kusunoki 1994-11-29
5268321 Method of making DRAM cell having improved radiation protection Masahiro Shimizu, Hiroki Shimano, Katsuhiro Tsukamoto 1993-12-07
5258319 Method of manufacturing a MOS type field effect transistor using an oblique ion implantation step Katsuhiro Tsukamoto 1993-11-02
5258321 Manufacturing method for semiconductor memory device having stacked trench capacitors and improved intercell isolation Masahiro Shimizu, Katsuhiro Tsukamoto 1993-11-02
5217913 Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers Kiyoto Watabe, Katsuyoshi Mitsui 1993-06-08
5200353 Method of manufacturing a semiconductor device having trench capacitor 1993-04-06
5200918 Static semiconductor memory with polysilicon source drain transistors Tomohisa Wada 1993-04-06
5183771 Method of manufacturing LDDFET having double sidewall spacers Katsuyoshi Mitsui 1993-02-02
5166763 Static type semiconductor memory device and method of manufacturing thereof Tomohisa Wada 1992-11-24
5146291 MIS device having lightly doped drain structure Kiyoto Watabe, Katsuyoshi Mitsui 1992-09-08
5089865 MIS semiconductor device Katsuyoshi Mitsui 1992-02-18
5061975 MOS type field effect transistor having LDD structure Katsuhiro Tsukamoto 1991-10-29
5023682 Semiconductor memory device Masahiro Shimizu, Hiroki Shimano, Katsuhiro Tsukamoto 1991-06-11
4942448 Structure for isolating semiconductor components on an integrated circuit and a method of manufacturing therefor Katsuhiro Tsukamoto, Masahiro Shimizu 1990-07-17
4918500 Semiconductor device having trench capacitor and manufacturing method therefor 1990-04-17
4702797 Method of manufacturing semiconductor memory device Hiroki Shimano, Masahiro Shimizu, Katsuhiro Tsukamoto 1987-10-27