Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6548871 | Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layer | Takashi Kuroi, Yasuyoshi Itoh, Katsuomi Shiozawa | 2003-04-15 |
| 6541825 | Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same | Takashi Kuroi, Syuichi Ueno | 2003-04-01 |
| 6503799 | Method of manufacturing semiconductor device | Takashi Kuroi, Shuuichi Ueno | 2003-01-07 |
| 6498077 | Semiconductor device and method of manufacturing same | Shuuichi Ueno, Takashi Kuroi | 2002-12-24 |
| 6482718 | Method of manufacturing semiconductor device | Katsuomi Shiozawa, Takashi Kuroi | 2002-11-19 |
| 6399985 | Semiconductor device | Takashi Kuroi, Yoshinori Okumura | 2002-06-04 |
| 6383884 | Method of manufacturing semiconductor device | Katsuomi Shiozawa, Takashi Kuroi, Yasuyoshi Itoh | 2002-05-07 |
| 6372604 | Method for forming a trench type element isolation structure and trench type element isolation structure | Maiko Sakai, Takashi Kuroi | 2002-04-16 |
| 6323102 | Method of manufacturing a semiconductor device | Takashi Kuroi, Maiko Sakai | 2001-11-27 |
| 6303432 | Method of manufacturing a semiconductor device | Takashi Kuroi, Yasuyoshi Itoh, Katsuomi Siozawa | 2001-10-16 |
| 6274457 | Method for manufacturing an isolation trench having plural profile angles | Maiko Sakai, Takashi Kuroi | 2001-08-14 |
| 6268263 | Method of forming a trench type element isolation in semiconductor substrate | Maiko Sakai, Takashi Kuroi | 2001-07-31 |
| 6265743 | Trench type element isolation structure | Maiko Sakai, Takashi Kuroi | 2001-07-24 |
| 6218262 | Semiconductor device and method of manufacturing the same | Takashi Kuroi, Maiko Sakai, Hirokazu Sayama | 2001-04-17 |
| 6214695 | Method of manufacturing semiconductor device | Yasuo Inoue, Yasuyoshi Itoh | 2001-04-10 |
| 6162669 | Method of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layer | Takashi Kuroi, Yoshinori Okumura | 2000-12-19 |
| 6150233 | Semiconductor device and method of manufacturing the same | Takashi Kuroi, Maiko Sakai, Hiromichi Kobayashi | 2000-11-21 |
| 6127737 | Semiconductor device and manufacturing method thereof | Takashi Kuroi, Maiko Sakai, Yasuo Inoue | 2000-10-03 |
| 6034409 | Isolation trench having plural profile angles | Maiko Sakai, Takashi Kuroi | 2000-03-07 |
| 6017800 | Semiconductor device and method of fabricating thereof | Hirokazu Sayama, Takashi Kuroi, Maiko Sakai | 2000-01-25 |
| 5932912 | Semiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layer | Takashi Kuroi, Yoshinori Okumura | 1999-08-03 |
| 5889335 | Semiconductor device and method of manufacturing the same | Takashi Kuroi, Maiko Sakai, Hirokazu Sayama | 1999-03-30 |