HO

Hidekazu Oda

Mitsubishi Electric: 34 patents #359 of 25,717Top 2%
RE Renesas Electronics: 30 patents #50 of 4,529Top 2%
RT Renesas Technology: 12 patents #178 of 3,337Top 6%
Overall (All Time): #24,624 of 4,157,543Top 1%
76
Patents All Time

Issued Patents All Time

Showing 26–50 of 76 patents

Patent #TitleCo-InventorsDate
8541272 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2013-09-24
8415213 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2013-04-09
8372747 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2013-02-12
7998802 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2011-08-16
7960281 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2011-06-14
7563663 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2009-07-21
7531402 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2009-05-12
7470618 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2008-12-30
7220637 Method of manufacturing semiconductor device with offset sidewall structure Kazunobu Ota, Hirokazu Sayama 2007-05-22
7183204 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2007-02-27
7170109 Heterojunction semiconductor device with element isolation structure Kohei Sugihara, Kazunobu Ota, Takahashi Hayashi 2007-01-30
6906393 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2005-06-14
6872642 Manufacturing method of semiconductor device Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2005-03-29
6838747 Semiconductor device having resistive element formed of semiconductor film 2005-01-04
6835610 Method of manufacturing semiconductor device having gate electrode with expanded upper portion Hirokazu Sayama, Kazunobu Ohta, Kouhei Sugihara 2004-12-28
6740939 Semiconductor device and manufacturing method thereof Hirokazu Sayama, Yukio Nishida, Kazunobu Ohta 2004-05-25
6734523 Semiconductor device including a well divided into a plurality of parts by a trench Shuuichi Ueno, Tomohiro Yamashita 2004-05-11
6600195 Semiconductor device Yukio Nishida, Hirokazu Sayama, Toshiyuki Oishi 2003-07-29
6521519 MIS transistor and manufacturing method thereof Satoshi Shimizu 2003-02-18
6521527 Semiconductor device and method of fabricating the same Takashi Kuroi, Shuichi Ueno, Satoshi Shimizu 2003-02-18
6518623 Semiconductor device having a buried-channel MOS structure Masashi Kitazawa, Katsuomi Shiozawa 2003-02-11
6506651 Semiconductor device and manufacturing method thereof Hirokazu Sayama, Yukio Nishida, Toshiyuki Oishi 2003-01-14
6483133 EEPROM with high channel hot carrier injection efficiency Shigeru Kusunoki 2002-11-19
6475844 Field effect transistor and method of manufacturing same Tomohiro Yamashita, Shuichi Ueno 2002-11-05
6469347 Buried-channel semiconductor device, and manufacturing method thereof Tomohiro Yamashita, Shuichi Ueno 2002-10-22