Issued Patents All Time
Showing 1–25 of 88 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408564 | Process-induced forming of oxide RRAM | Takashi Ando, Soon-Cheon Seo, Youngseok Kim | 2025-09-02 |
| 12284922 | Stacked access device and resistive memory | Gloria W. Fraczak, Kumar R. Virwani, Takashi Ando | 2025-04-22 |
| 12225833 | Oxide-based resistive memory having a plasma-exposed bottom electrode | Takashi Ando, Eduard A. Cartier, Babar A. Khan, Youngseok Kim, Dexin Kong +2 more | 2025-02-11 |
| 11956975 | BEOL fat wire level ground rule compatible embedded artificial intelligence integration | Soon-Cheon Seo, Dexin Kong, Takashi Ando, Paul C. Jamison, Youngseok Kim +3 more | 2024-04-09 |
| 11915926 | Percolation doping of inorganic-organic frameworks for multiple device applications | Leonidas E. Ocola, Eric A. Joseph, Takashi Ando, Damon B. Farmer | 2024-02-27 |
| 11889771 | Mitigating moisture driven degradation of silicon doped chalcogenides | Cheng-Wei Cheng, Huai-Yu Cheng, I-Ting Kuo, Robert L. Bruce, Martin M. Frank | 2024-01-30 |
| 11844290 | Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices | Devi Koty, Qingyun Yang, Hongwen Yan, Takashi Ando, Marinus Hopstaken | 2023-12-12 |
| 11730070 | Resistive random-access memory device with step height difference | Seyoung Kim, Asit Ray, Takashi Ando | 2023-08-15 |
| 11647680 | Oxide-based resistive memory having a plasma-exposed bottom electrode | Takashi Ando, Eduard A. Cartier, Babar A. Khan, Youngseok Kim, Dexin Kong +2 more | 2023-05-09 |
| 11647639 | Conductive bridging random access memory formed using selective barrier metal removal | Takashi Ando | 2023-05-09 |
| 11430513 | Non-volatile memory structure and method for low programming voltage for cross bar array | Soon-Cheon Seo, Youngseok Kim, Dexin Kong, Takashi Ando | 2022-08-30 |
| 11289650 | Stacked access device and resistive memory | Gloria W. Fraczak, Kumar R. Virwani, Takashi Ando | 2022-03-29 |
| 11276732 | Semiconductor memory devices formed using selective barrier metal removal | Takashi Ando | 2022-03-15 |
| 11270893 | Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures | John M. Papalia, Nathan P. Marchack, Sebastian U. Engelmann | 2022-03-08 |
| 11258012 | Oxygen-free plasma etching for contact etching of resistive random access memory | Devi Koty, Qingyun Yang, Takashi Ando, Eduard A. Cartier, Vijay Narayanan +1 more | 2022-02-22 |
| 11177319 | RRAM device with spacer for electrode isolation | Iqbal Rashid Saraf, Dexin Kong, Takashi Ando | 2021-11-16 |
| 11158795 | Resistive switching memory with replacement metal electrode | Takashi Ando, Seyoung Kim, Vijay Narayanan | 2021-10-26 |
| 11043535 | High-resistance memory devices | Takashi Ando, Marwan H. Khater, Seyoung Kim, Vijay Narayanan | 2021-06-22 |
| 11038104 | Resistive memory crossbar array with top electrode inner spacers | Takashi Ando, Iqbal Rashid Saraf, Shyng-Tsong Chen | 2021-06-15 |
| 10991763 | Vertical array of resistive switching devices having restricted filament regions and tunable top electrode volume | Takashi Ando, Robert L. Bruce, John Rozen | 2021-04-27 |
| 10923348 | Gate-all-around field effect transistor using template-assisted-slective-epitaxy | Cheng-Wei Cheng, Sanghoon Lee | 2021-02-16 |
| 10903425 | Oxygen vacancy and filament-loss protection for resistive switching devices | Takashi Ando, Seyoung Kim, Vijay Narayanan | 2021-01-26 |
| 10903270 | Access device and phase change memory combination structure in backend of line (BEOL) | Robert L. Bruce, Fabio Carta, Gloria W. Fraczak, Kumar R. Virwani | 2021-01-26 |
| 10892408 | Multivalent oxide cap for analog switching resistive memory | Takashi Ando, Marwan H. Khater, Seyoung Kim | 2021-01-12 |
| 10886467 | CBRAM by subtractive etching of metals | Qing Cao, Takashi Ando, John Rozen | 2021-01-05 |