Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12310031 | Multi-layer ovonic threshold switch (OTS) for switching devices and memory devices using the same | Alexander Grün | 2025-05-20 |
| 11889771 | Mitigating moisture driven degradation of silicon doped chalcogenides | Cheng-Wei Cheng, I-Ting Kuo, Robert L. Bruce, Martin M. Frank, Hiroyuki Miyazoe | 2024-01-30 |
| 11362276 | High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application | Hsiang-Lan Lung | 2022-06-14 |
| 11355552 | Memory material, and memory device applying the same | I-Ting Kuo, Hsiang-Lan Lung | 2022-06-07 |
| 11289540 | Semiconductor device and memory cell | I-Ting Kuo, Hsiang-Lan Lung | 2022-03-29 |
| 11271155 | Suppressing oxidation of silicon germanium selenium arsenide material | Cheng-Wei Cheng, I-Ting Kuo, Hsiang-Lan Lung | 2022-03-08 |
| 11158787 | C—As—Se—Ge ovonic materials for selector devices and memory devices using same | I-Ting Kuo, Hsiang-Lan Lung | 2021-10-26 |
| 10978511 | Semiconductor device and memory cell | I-Ting Kuo, Hsiang-Lan Lung | 2021-04-13 |
| 10541271 | Superlattice-like switching devices | Hsiang-Lan Lung, I-Ting Kuo | 2020-01-21 |
| 10374009 | Te-free AsSeGe chalcogenides for selector devices and memory devices using same | Hsiang-Lan Lung, I-Ting Kuo | 2019-08-06 |
| 10050196 | Dielectric doped, Sb-rich GST phase change memory | Hsiang-Lan Lung | 2018-08-14 |
| 9917252 | GaSbGe phase change memory materials | Hsiang-Lan Lung | 2018-03-13 |
| 9882126 | Phase change storage device with multiple serially connected storage regions | Matthew J. BrightSky, Wei-Chih Chien, Sangbum Kim, Chiao-Wen Yeh | 2018-01-30 |
| 9653683 | Phase change memory cell with improved phase change material | Simone Raoux | 2017-05-16 |
| 9257643 | Phase change memory cell with improved phase change material | Simone Raoux | 2016-02-09 |
| 9214229 | Phase change memory material and system for embedded memory applications | Hsiang-Lan Lung, Che-Min Lin | 2015-12-15 |
| 8946666 | Ge-Rich GST-212 phase change memory materials | Hsiang-Lan Lung, Simone Raoux, Yen-Hao Shih, Matthew J. Breitwisch | 2015-02-03 |
| 8932901 | Stressed phase change materials | — | 2015-01-13 |
| 8916414 | Method for making memory cell by melting phase change material in confined space | Hsiang-Lan Lung | 2014-12-23 |
| 8772747 | Composite target sputtering for forming doped phase change materials | Chieh-Fang Chen, Hsiang-Lan Lung, Yen-Hao Shih, Simone Raoux, Matthew J. Breitwisch | 2014-07-08 |
| 8426242 | Composite target sputtering for forming doped phase change materials | Chieh-Fang Chen, Hsiang-Lan Lung, Yen-Hao Shih, Simone Raoux, Matthew J. Breitwisch | 2013-04-23 |
| 8363463 | Phase change memory having one or more non-constant doping profiles | Yen-Hao Shih, Chieh-Fang Chen, Chao-I Wu, Ming-Hsiu Lee, Hsiang-Lan Lung +3 more | 2013-01-29 |
| 8178387 | Methods for reducing recrystallization time for a phase change material | Simone Raoux | 2012-05-15 |
| 6797090 | Production method of multi-layer information record carriers | Huei-Wen Yang, Wen-Yih Liao, Tzuan-Ren Jeng, Chien-Liang Huang, Der-Ray Huang | 2004-09-28 |