Issued Patents All Time
Showing 1–25 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9166165 | Uniform critical dimension size pore for PCRAM application | Roger W. Cheek, Chung H. Lam, Hsiang-Lan Lung, Eric A. Joseph, Alejandro G. Schrott | 2015-10-20 |
| 9059394 | Self-aligned lower bottom electrode | — | 2015-06-16 |
| 8987700 | Thermally confined electrode for programmable resistance memory | Sheng-Chih Lai, Hsiang-Lan Lung | 2015-03-24 |
| 8946666 | Ge-Rich GST-212 phase change memory materials | Huai-Yu Cheng, Hsiang-Lan Lung, Simone Raoux, Yen-Hao Shih | 2015-02-03 |
| 8897062 | Memory programming for a phase change memory cell | Roger W. Cheek, Stefanie Chiras, Ibrahim M. Elfadel, Michele M. Franceschini, John P. Karidis +3 more | 2014-11-25 |
| 8860111 | Phase change memory cell array with self-converged bottom electrode and method for manufacturing | Hsiang-Lan Lung, Chung H. Lam | 2014-10-14 |
| 8853047 | Self aligned fin-type programmable memory cell | Hsiang-Lan Lung, Chung H. Lam | 2014-10-07 |
| 8809828 | Small footprint phase change memory cell | Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung | 2014-08-19 |
| 8772747 | Composite target sputtering for forming doped phase change materials | Huai-Yu Cheng, Chieh-Fang Chen, Hsiang-Lan Lung, Yen-Hao Shih, Simone Raoux | 2014-07-08 |
| 8729521 | Self aligned fin-type programmable memory cell | Hsiang-Lan Lung, Chung H. Lam | 2014-05-20 |
| 8728859 | Small footprint phase change memory cell | Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung | 2014-05-20 |
| 8716759 | Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device | Roger W. Cheek, Jeffrey B. Johnson, Chung H. Lam, Beth Ann Rainey, Michael J. Zierak | 2014-05-06 |
| 8686391 | Pore phase change material cell fabricated from recessed pillar | Alejandro G. Schrott, Chung H. Lam, Eric A. Joseph, Roger W. Cheek | 2014-04-01 |
| 8648326 | Phase change memory electrode with sheath for reduced programming current | Bipin Rajendran | 2014-02-11 |
| 8633464 | In via formed phase change memory cell with recessed pillar heater | Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2014-01-21 |
| 8589320 | Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks | Chung H. Lam, Dharmendra S. Modha, Bipin Rajendran | 2013-11-19 |
| 8536675 | Thermally insulated phase change material memory cells | Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more | 2013-09-17 |
| 8492194 | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell | Chung H. Lam | 2013-07-23 |
| 8471236 | Flat lower bottom electrode for phase change memory cell | Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung, Alejandro G. Schrott | 2013-06-25 |
| 8466006 | Thermally insulated phase material cells | Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more | 2013-06-18 |
| 8447714 | System for electronic learning synapse with spike-timing dependent plasticity using phase change memory | Roger W. Cheek, Chung H. Lam, Dharmendra S. Modha, Bipin Rajendran | 2013-05-21 |
| 8445313 | Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process | Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung H. Lam, Michael F. Lofaro +3 more | 2013-05-21 |
| 8426242 | Composite target sputtering for forming doped phase change materials | Huai-Yu Cheng, Chieh-Fang Chen, Hsiang-Lan Lung, Yen-Hao Shih, Simone Raoux | 2013-04-23 |
| 8415653 | Single mask adder phase change memory element | Chandrasekharan Kothandaraman, Chung H. Lam | 2013-04-09 |
| 8395192 | Single mask adder phase change memory element | Chung H. Lam | 2013-03-12 |