Issued Patents All Time
Showing 26–50 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8383501 | Vertical field effect transistor arrays and methods for fabrication thereof | Chung H. Lam, Alejandro G. Schrott | 2013-02-26 |
| 8378328 | Phase change memory random access device using single-element phase change material | Chieh-Fang Chen, Yi-Chou Chen, Chung H. Lam, Simone Raoux | 2013-02-19 |
| 8363463 | Phase change memory having one or more non-constant doping profiles | Yen-Hao Shih, Huai-Yu Cheng, Chieh-Fang Chen, Chao-I Wu, Ming-Hsiu Lee +3 more | 2013-01-29 |
| 8344351 | Phase change memory device with plated phase change material | Eric A. Joseph, Alejandro G. Schrott, Xiaoyan Shao | 2013-01-01 |
| 8338225 | Method to reduce a via area in a phase change memory cell | Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott, Yu Zhu | 2012-12-25 |
| 8330137 | Pore phase change material cell fabricated from recessed pillar | Alejandro G. Schrott, Chung H. Lam, Eric A. Joseph, Roger W. Cheek | 2012-12-11 |
| 8324605 | Dielectric mesh isolated phase change structure for phase change memory | Hsiang-Lan Lung, Chieh-Fang Chen, Yen-Hao Shih, Ming-Hsiu Lee, Chung H. Lam +3 more | 2012-12-04 |
| 8311965 | Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance material | Chung H. Lam, Dharmendra S. Modha, Bipin Rajendran | 2012-11-13 |
| 8310864 | Self-aligned bit line under word line memory array | Hsiang-Lan Lung, Chung H. Lam, Erh-Kun Lai | 2012-11-13 |
| 8283202 | Single mask adder phase change memory element | Chandrasekharan Kothandaraman, Chung H. Lam | 2012-10-09 |
| 8283650 | Flat lower bottom electrode for phase change memory cell | Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung, Alejandro G. Schrott | 2012-10-09 |
| 8278197 | Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device | Roger W. Cheek, Jeffrey B. Johnson, Chung H. Lam, Beth Ann Rainey, Michael J. Zierak | 2012-10-02 |
| 8273598 | Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process | Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung H. Lam, Michael F. Lofaro +3 more | 2012-09-25 |
| 8238149 | Methods and apparatus for reducing defect bits in phase change memory | Yen-Hao Shih, Ming-Hsiu Lee, Chao-I Wu, Hsiang-Lan Lung, Chung H. Lam +2 more | 2012-08-07 |
| 8233317 | Phase change memory device suitable for high temperature operation | Chung H. Lam, Bipin Rajendran, Simone Raoux, Alejandro G. Schrott, Daniel Krebs | 2012-07-31 |
| 8189372 | Integrated circuit including electrode having recessed portion | Shihhung Chen, Thomas Happ, Eric A. Joseph | 2012-05-29 |
| 8178386 | Phase change memory cell array with self-converged bottom electrode and method for manufacturing | Hsiang-Lan Lung, Chung H. Lam | 2012-05-15 |
| 8138056 | Thermally insulated phase change material memory cells with pillar structure | Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more | 2012-03-20 |
| 8138028 | Method for manufacturing a phase change memory device with pillar bottom electrode | Hsiang-Lan Lung, Chieh-Fang Chen, Yi-Chou Chen, Shih-Hung Chen, Chung H. Lam +5 more | 2012-03-20 |
| 8129268 | Self-aligned lower bottom electrode | — | 2012-03-06 |
| 8119528 | Nanoscale electrodes for phase change memory devices | Alejandro G. Schrott, Eric A. Joseph, Mary B. Rothwell, Chung H. Lam, Bipin Rajendran +1 more | 2012-02-21 |
| 8116126 | Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition | Chung H. Lam, Bipin Rajendran | 2012-02-14 |
| 8115186 | Phase change memory cell with reduced switchable volume | Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung, Alejandro G. Schrott | 2012-02-14 |
| 8110901 | Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars | Chung H. Lam, Alejandro G. Schrott | 2012-02-07 |
| 8105859 | In via formed phase change memory cell with recessed pillar heater | Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2012-01-31 |