SR

Simone Raoux

IBM: 26 patents #4,008 of 70,183Top 6%
MC Macronix International Co.: 11 patents #168 of 1,241Top 15%
QA Qimonda Ag: 1 patents #33 of 64Top 55%
Overall (All Time): #154,988 of 4,157,543Top 4%
26
Patents All Time

Issued Patents All Time

Showing 25 most recent of 26 patents

Patent #TitleCo-InventorsDate
9653683 Phase change memory cell with improved phase change material Huai-Yu Cheng 2017-05-16
9257643 Phase change memory cell with improved phase change material Huai-Yu Cheng 2016-02-09
8946666 Ge-Rich GST-212 phase change memory materials Huai-Yu Cheng, Hsiang-Lan Lung, Yen-Hao Shih, Matthew J. Breitwisch 2015-02-03
8828785 Single-crystal phase change material on insulator for reduced cell variability Guy M. Cohen 2014-09-09
8772747 Composite target sputtering for forming doped phase change materials Huai-Yu Cheng, Chieh-Fang Chen, Hsiang-Lan Lung, Yen-Hao Shih, Matthew J. Breitwisch 2014-07-08
8426242 Composite target sputtering for forming doped phase change materials Huai-Yu Cheng, Chieh-Fang Chen, Hsiang-Lan Lung, Yen-Hao Shih, Matthew J. Breitwisch 2013-04-23
8378328 Phase change memory random access device using single-element phase change material Matthew J. Breitwisch, Chieh-Fang Chen, Yi-Chou Chen, Chung H. Lam 2013-02-19
8363463 Phase change memory having one or more non-constant doping profiles Yen-Hao Shih, Huai-Yu Cheng, Chieh-Fang Chen, Chao-I Wu, Ming-Hsiu Lee +3 more 2013-01-29
8324605 Dielectric mesh isolated phase change structure for phase change memory Hsiang-Lan Lung, Chieh-Fang Chen, Yen-Hao Shih, Ming-Hsiu Lee, Matthew J. Breitwisch +3 more 2012-12-04
8233317 Phase change memory device suitable for high temperature operation Matthew J. Breitwisch, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott, Daniel Krebs 2012-07-31
8178387 Methods for reducing recrystallization time for a phase change material Huai-Yu Cheng 2012-05-15
8114331 Amorphous oxide release layers for imprint lithography, and method of use Frances Anne Houle 2012-02-14
8029716 Amorphous nitride release layers for imprint lithography, and method of use Frances Anne Houle, Christopher V. Jahnes, Stephen M. Rossnagel 2011-10-04
7932507 Current constricting phase change memory element structure Chieh-Fang Chen, Shih-Hung Chen, Yi-Chou Chen, Thomas Happ, Chia-Hua Ho +4 more 2011-04-26
7910910 Phase-change memory cell and method of fabricating the phase-change memory cell Jonathan Zanhung Sun, Hemantha K. Wickramasinghe 2011-03-22
7875873 Phase change materials and associated memory devices Yi-Chou Chen, Frances Anne Houle, Charles Thomas Rettner, Alejandro G. Schrott 2011-01-25
7833825 Solution-based deposition process for metal chalcogenides David B. Mitzi 2010-11-16
7745807 Current constricting phase change memory element structure Chieh-Fang Chen, Shih-Hung Chen, Yi-Chou Chen, Thomas Happ, Chia-Hua Ho +4 more 2010-06-29
7501648 Phase change materials and associated memory devices Yi-Chou Chen, Frances Anne Houle, Charles Thomas Rettner, Alejandro G. Schrott 2009-03-10
7494841 Solution-based deposition process for metal chalcogenides David B. Mitzi 2009-02-24
7491573 Phase change materials for applications that require fast switching and high endurance Alejandro G. Schrott, Chung H. Lam, Chieh-Fang Chen 2009-02-17
7488967 Structure for confining the switching current in phase memory (PCM) cells Geoffrey Burr, Chung H. Lam, Stephen M. Rossnagel, Alejandro G. Schrott, Jonathan Zanhung Sun +1 more 2009-02-10
7459266 Phase-change memory cell and method of fabricating the phase-change memory cell Jonathan Zanhong Sun, Hemantha Wichramasinghe 2008-12-02
7221579 Method and structure for high performance phase change memory Lia Krusin-Elbaum, Rudolf Ludeke, Dennis M. Newns 2007-05-22
7009694 Indirect switching and sensing of phase change memory cells Mark Whitney Hart, Chung H. Lam, Christie R. K. Marrian, Gary M. McClelland, Charles Thomas Rettner +1 more 2006-03-07