Issued Patents All Time
Showing 1–25 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11972785 | MRAM structure with enhanced magnetics using seed engineering | Pouya Hashemi, Guohan Hu, Saba Zare | 2024-04-30 |
| 11823723 | Memory device with spin-harvesting structure | Christopher Safranski | 2023-11-21 |
| 11778921 | Double magnetic tunnel junction device | Pouya Hashemi, Bruce B. Doris, Chandrasekharan Kothandaraman | 2023-10-03 |
| 11574667 | Resonant synthetic antiferromagnet reference layered structure | Christopher Safranski | 2023-02-07 |
| 11487508 | Magnetic tunnel junction based true random number generator | Rasit Onur Topaloglu, Matthias Georg Gottwald, Chandrasekharan Kothandaraman | 2022-11-01 |
| 11316104 | Inverted wide base double magnetic tunnel junction device | Pouya Hashemi, Bruce B. Doris, Janusz J. Nowak | 2022-04-26 |
| 11289644 | Magnetic tunnel junction having all-around structure | Kotb Jabeur, Daniel C. Worledge, Pouya Hashemi | 2022-03-29 |
| 11171283 | Modified double magnetic tunnel junction structure suitable for BEOL integration | — | 2021-11-09 |
| 10777247 | Spin-based storage element | — | 2020-09-15 |
| 10229722 | Three terminal spin hall MRAM | John K. DeBrosse, Daniel C. Worledge | 2019-03-12 |
| 10078496 | Magnetic tunnel junction (MTJ) based true random number generators (TRNG) | Suyog Gupta, Chandrasekharan Kothandaraman | 2018-09-18 |
| 9715917 | Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer | Guohan Hu, Luqiao Liu, Daniel C. Worledge | 2017-07-25 |
| 9647204 | Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer | Guohan Hu, Luqiao Liu, Daniel C. Worledge | 2017-05-09 |
| 9355700 | Read circuit for memory | John K. DeBrosse, Po-Kang Wang | 2016-05-31 |
| 9269415 | Utilization of the anomalous hall effect or polarized spin hall effect for MRAM applications | Luqiao Liu | 2016-02-23 |
| 9105342 | Read circuit for memory | John K. DeBrosse, Po-Kang Wang | 2015-08-11 |
| 8927301 | Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor | Michael C. Gaidis, Janusz J. Nowak | 2015-01-06 |
| 8860105 | Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element | Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris | 2014-10-14 |
| 8861262 | Spin-current switchable magnetic memory element and method of fabricating the memory element | Stuart Stephen Papworth Parkin | 2014-10-14 |
| 8558332 | Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element | Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris | 2013-10-15 |
| 8406040 | Spin-torque based memory device using a magnesium oxide tunnel barrier | Daniel C. Worledge, Guohan Hu | 2013-03-26 |
| 8310863 | Spin-current switchable magnetic memory element and method of fabricating the memory element | Stuart Stephen Papworth Parkin | 2012-11-13 |
| 8283741 | Optimized free layer for spin torque magnetic random access memory | Guohan Hu, Daniel C. Worledge | 2012-10-09 |
| 8270208 | Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor | Michael C. Gaidis, Janusz J. Nowak | 2012-09-18 |
| 8008095 | Methods for fabricating contacts to pillar structures in integrated circuits | Solomon Assefa, Gregory Costrini, Christopher V. Jahnes, Michael J. Rooks | 2011-08-30 |