Daniel C. Worledge — 145 Patents at IBM

Daniel C. Worledge has been granted 145 US patents while listed as an inventor at IBM. The first was granted in 2004 and the most recent in January 2025. Daniel C. Worledge ranks #6,675 of 4,157,543 US inventors in our database (top 0.16%). Patent records list Daniel C. Worledge in San Jose, CA, US.

Issued Patents All Time

Showing 1–25 of 145 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12190925	Magnetic exchange coupled MTJ free layer having low switching current and high data retention	Guohan Hu	2025-01-07
12063868	Low RA narrow base modified double magnetic tunnel junction structure	Guohan Hu	2024-08-13	$23,564,000
12020736	Spin-orbit-torque magnetoresistive random-access memory array	Pouya Hashemi, John K. DeBrosse	2024-06-25	$10,690,000
11569439	Double spin filter tunnel junction	—	2023-01-31	$7,725,000
11557628	Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM	Guohan Hu	2023-01-17	$4,393,000
11527707	In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers	Stephen L. Brown, Guohan Hu, Jonathan Z. Sun	2022-12-13	$8,590,000
11501810	Amorphous spin diffusion layer for modified double magnetic tunnel junction structure	Guohan Hu	2022-11-15	$5,426,000
11417837	Double spin filter tunnel junction	—	2022-08-16	$11,009,000
11309488	Double spin filter tunnel junction	—	2022-04-19	$6,872,000
11302863	STT MRAM matertails with heavy metal insertion	Guohan Hu	2022-04-12	$4,292,000
11289644	Magnetic tunnel junction having all-around structure	Kotb Jabeur, Jonathan Zanhong Sun, Pouya Hashemi	2022-03-29	$6,469,000
11264559	Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM	Guohan Hu	2022-03-01	$6,542,000
11223010	Thin reference layer for STT MRAM	Guohan Hu, Younghyun Kim	2022-01-11	$4,843,000
11164615	Spin hall write select for magneto-resistive random access memory	Luqiao Liu, Jonathan Z. Sun	2021-11-02	$2,126,000
10916581	Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM	Guohan Hu	2021-02-09	$3,536,000
10839935	Dynamic redundancy for memory	John K. DeBrosse, Kotb Jabeur, Matthew R. Wordeman	2020-11-17	$2,639,000
10734571	Magnetic field sensor based on topological insulator and insulating coupler materials	Anthony J. Annunziata, Joel D. Chudow	2020-08-04	$3,150,000
10686123	Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM	Guohan Hu	2020-06-16	$3,682,000
10553781	In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers	Stephen L. Brown, Guohan Hu, Jonathan Z. Sun	2020-02-04	$2,135,000
10510390	Magnetic exchange coupled MTJ free layer having low switching current and high data retention	Guohan Hu, Jeong-Heon Park	2019-12-17	$8,615,000
10510391	Magnetic exchange coupled MTJ free layer having low switching current and high data retention	Guohan Hu, Jeong-Heon Park	2019-12-17	$8,615,000
10468455	Simplified double magnetic tunnel junctions	Guohan Hu, Younghyun Kim, Jeong-Heon Park	2019-11-05	$4,028,000
10453509	Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention	Guohan Hu	2019-10-22	$3,154,000
10437665	Bad bit register for memory	John K. DeBrosse	2019-10-08	$4,743,000
10424727	Spin transfer torque cell for magnetic random access memory	Michael C. Gaidis, Janusz J. Nowak	2019-09-24	$3,094,000

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Daniel C. Worledge — 145 Patents

Issued Patents All Time

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