Issued Patents All Time
Showing 25 most recent of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12364164 | Reactive serial resistance reduction for magnetoresistive random-access memory devices | Matthias Georg Gottwald, Stephen L. Brown, Alexander Reznicek | 2025-07-15 |
| 12190925 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Daniel C. Worledge | 2025-01-07 |
| 12063868 | Low RA narrow base modified double magnetic tunnel junction structure | Daniel C. Worledge | 2024-08-13 |
| 11972785 | MRAM structure with enhanced magnetics using seed engineering | Pouya Hashemi, Jonathan Zanhong Sun, Saba Zare | 2024-04-30 |
| 11557628 | Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM | Daniel C. Worledge | 2023-01-17 |
| 11527707 | In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers | Stephen L. Brown, Jonathan Z. Sun, Daniel C. Worledge | 2022-12-13 |
| 11501810 | Amorphous spin diffusion layer for modified double magnetic tunnel junction structure | Daniel C. Worledge | 2022-11-15 |
| 11342115 | Planar solenoid inductors with antiferromagnetic pinned cores | Naigang Wang | 2022-05-24 |
| 11302863 | STT MRAM matertails with heavy metal insertion | Daniel C. Worledge | 2022-04-12 |
| 11264559 | Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM | Daniel C. Worledge | 2022-03-01 |
| 11223010 | Thin reference layer for STT MRAM | Younghyun Kim, Daniel C. Worledge | 2022-01-11 |
| 11222746 | Method for forming a planar solenoid inductor | Naigang Wang | 2022-01-11 |
| 10916581 | Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM | Daniel C. Worledge | 2021-02-09 |
| 10833253 | Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devices | — | 2020-11-10 |
| 10804458 | Boron segregation in magnetic tunnel junctions | Younghyun Kim, Chandrasekara Kothandaraman, Jeong-Heon Park | 2020-10-13 |
| 10686123 | Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM | Daniel C. Worledge | 2020-06-16 |
| 10600566 | Method for forming a planar, closed loop magnetic structure | Naigang Wang | 2020-03-24 |
| 10580971 | Magnetic domain wall shift register memory devices with high magnetoresistance ratio structures | Cheng-Wei Chien | 2020-03-03 |
| 10553781 | In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers | Stephen L. Brown, Jonathan Z. Sun, Daniel C. Worledge | 2020-02-04 |
| 10510390 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Jeong-Heon Park, Daniel C. Worledge | 2019-12-17 |
| 10510391 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Jeong-Heon Park, Daniel C. Worledge | 2019-12-17 |
| 10468455 | Simplified double magnetic tunnel junctions | Younghyun Kim, Jeong-Heon Park, Daniel C. Worledge | 2019-11-05 |
| 10453509 | Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention | Daniel C. Worledge | 2019-10-22 |
| 10374145 | In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers | Stephen L. Brown, Jonathan Z. Sun, Daniel C. Worledge | 2019-08-06 |
| 10361361 | Thin reference layer for STT MRAM | Younghyun Kim, Daniel C. Worledge | 2019-07-23 |