Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11411175 | Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory | Anthony J. Annunziata, Nathan P. Marchack, Eugene J. O'Sullivan | 2022-08-09 |
| 11216595 | Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology | Richard H. Boivie, Eduard A. Cartier, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla +10 more | 2022-01-04 |
| 10997321 | Encryption engine with an undetectable/tamper proof private key in late node CMOS technology | Richard H. Boivie, Eduard A. Cartier, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla +10 more | 2021-05-04 |
| 10804458 | Boron segregation in magnetic tunnel junctions | Guohan Hu, Younghyun Kim, Jeong-Heon Park | 2020-10-13 |
| 10778422 | Lithographically defined intrinsic identifier | Dirk Pfeiffer, Sami Rosenblatt | 2020-09-15 |
| 10721082 | Screen printed phosphors for intrinsic chip identifiers | Dirk Pfeiffer, Sami Rosenblatt | 2020-07-21 |
| 10566524 | Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices | Anthony J. Annunziata, Babar A. Khan, John R. Sporre | 2020-02-18 |
| 10551254 | Approach to measuring strain effects using ring oscillators | Sami Rosenblatt, Akil Khamisi Sutton | 2020-02-04 |
| 10423805 | Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology | Richard H. Boivie, Eduard A. Cartier, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla +10 more | 2019-09-24 |
| 10230043 | Boron segregation in magnetic tunnel junctions | Guohan Hu, Younghyun Kim, Jeong-Heon Park | 2019-03-12 |
| 9970830 | Approach to measuring strain effects using ring oscillators | Sami Rosenblatt, Akil Khamisi Sutton | 2018-05-15 |
| 9911914 | Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices | Anthony J. Annunziata, Babar A. Khan, John R. Sporre | 2018-03-06 |
| 9698339 | Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor material | Anthony J. Annunziata, Marinus Hopstaken, Junghyuk Lee, Deborah A. Neumayer, Jeong-Heon Park | 2017-07-04 |
| 9281390 | Structure and method for forming programmable high-K/metal gate memory device | Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei | 2016-03-08 |
| 7551470 | Non volatile memory RAD-hard (NVM-rh) system | Karl R. Erickson, John A. Fifield, Phil C. Paone, William R. Tonti | 2009-06-23 |
| 6972614 | Circuits associated with fusible elements for establishing and detecting of the states of those elements | Mark E. Anderson, Sundar Iyer, Edward P. Maciejewski, George E. Smith, III | 2005-12-06 |