Issued Patents All Time
Showing 1–25 of 97 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE50613 | FinFET gate cut after dummy gate removal | Siva Kanakasabapathy, Andrew M. Greene, Jeffrey C. Shearer, Nicole Saulnier | 2025-09-30 |
| 12402403 | Air gap spacer for metal gates | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Sean Teehan | 2025-08-26 |
| 12327798 | Physical unclonable function | Kangguo Cheng, Eric R. Miller, Fee Li Lie, Gauri Karve, Marc A. Bergendahl | 2025-06-10 |
| 12166110 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Sean Teehan | 2024-12-10 |
| 11869936 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, Robert R. Robison +1 more | 2024-01-09 |
| 11869937 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, Robert R. Robison +1 more | 2024-01-09 |
| 11652161 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Sean Teehan | 2023-05-16 |
| 11646235 | Vertical tunneling field effect transistor with dual liner bottom spacer | Eric R. Miller, Marc A. Bergendahl, Kangguo Cheng, Sean Teehan | 2023-05-09 |
| 11615992 | Substrate isolated VTFET devices | Eric R. Miller, Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie | 2023-03-28 |
| 11557589 | Air gap spacer for metal gates | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Sean Teehan | 2023-01-17 |
| 11462631 | Sublithography gate cut physical unclonable function | Kangguo Cheng, Eric R. Miller, Fee Li Lie, Gauri Karve, Marc A. Bergendahl | 2022-10-04 |
| 11315922 | Fin cut to prevent replacement gate collapse on STI | Andrew M. Greene, Balasubramanian Pranatharthiharan, Sivananda K. Kanakasabapathy | 2022-04-26 |
| 11239316 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, Robert R. Robison +1 more | 2022-02-01 |
| 11183389 | Fin field effect transistor devices with self-aligned gates | Wenyu Xu, Stuart A. Sieg, Ruilong Xie | 2021-11-23 |
| 11152266 | Vertical tunneling field effect transistor with dual liner bottom spacer | Eric R. Miller, Marc A. Bergendahl, Kangguo Cheng, Sean Teehan | 2021-10-19 |
| 11127815 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, Robert R. Robison +1 more | 2021-09-21 |
| 11043581 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Sean Teehan | 2021-06-22 |
| 11024715 | FinFET gate cut after dummy gate removal | Siva Kanakasabapathy, Andrew M. Greene, Jeffrey C. Shearer, Nicole Saulnier | 2021-06-01 |
| 11004944 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, Peng Xu | 2021-05-11 |
| 10985250 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, Peng Xu | 2021-04-20 |
| 10957536 | Removal of trilayer resist without damage to underlying structure | Muthumanickam Sankarapandian, Soon-Cheon Seo, Indira Seshadri | 2021-03-23 |
| 10937810 | Sub-fin removal for SOI like isolation with uniform active fin height | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller +1 more | 2021-03-02 |
| 10833190 | Super long channel device within VFET architecture | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller +1 more | 2020-11-10 |
| 10741752 | Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices | Anthony J. Annunziata, Babar A. Khan, Chandrasekharan Kothandaraman | 2020-08-11 |
| 10658473 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, Peng Xu | 2020-05-19 |