Issued Patents All Time
Showing 1–25 of 213 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12336294 | Gate-cut and separation techniques for enabling independent gate control of stacked transistors | Ruilong Xie, Nicolas Loubet, Julien Frougier, Lawrence A. Clevenger, Prasad Bhosale +2 more | 2025-06-17 |
| 12310264 | Phase change memory using multiple phase change layers and multiple heat conductors | Injo Ok, Kevin W. Brew, Wei Wang | 2025-05-20 |
| 12278237 | Stacked FETS with non-shared work function metals | Ruilong Xie, Julien Frougier, Junli Wang, Dechao Guo, Ruqiang Bao +1 more | 2025-04-15 |
| 12268031 | Backside power rails and power distribution network for density scaling | Ruilong Xie, Kisik Choi, Somnath Ghosh, Sagarika Mukesh, Albert M. Chu +6 more | 2025-04-01 |
| 12237368 | Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack | Injo Ok, Soon-Cheon Seo, Charan V. Surisetty | 2025-02-25 |
| 12237328 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2025-02-25 |
| 12230544 | Stacked transistors with different channel widths | Kangguo Cheng, Lawrence A. Clevenger, John H. Zhang | 2025-02-18 |
| 12166042 | Stacked nanosheet gate-all-around device structures | Nicolas Loubet, Huiming Bu | 2024-12-10 |
| 12136655 | Backside electrical contacts to buried power rails | Ruilong Xie, Brent A. Anderson, Albert M. Young, Kangguo Cheng, Julien Frougier +2 more | 2024-11-05 |
| 12106969 | Substrate thinning for a backside power distribution network | Ruilong Xie, Mukta G. Farooq, Julien Frougier, Takeshi Nogami, Roy R. Yu +1 more | 2024-10-01 |
| 12057371 | Semiconductor device with early buried power rail (BPR) and backside power distribution network (BSPDN) | Ruilong Xie, Mukta G. Farooq, Brent A. Anderson | 2024-08-06 |
| 12002758 | Backside metal-insulator-metal (MIM) capacitors extending through backside interlayer dielectric (BILD) layer or semiconductor layer and partly through dielectric layer | Ruilong Xie, Takeshi Nogami, Roy R. Yu, Chih-Chao Yang | 2024-06-04 |
| 11942426 | Semiconductor structure having alternating selective metal and dielectric layers | Son V. Nguyen, Takeshi Nogami | 2024-03-26 |
| 11915966 | Backside power rail integration | Ruilong Xie, Takeshi Nogami, Roy R. Yu, Albert M. Young, Kisik Choi +1 more | 2024-02-27 |
| 11908734 | Composite interconnect formation using graphene | Takeshi Nogami, Son V. Nguyen | 2024-02-20 |
| 11894436 | Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages | Julien Frougier, Ruilong Xie, Nicolas Loubet, Andrew M. Greene, Veeraraghavan S. Basker | 2024-02-06 |
| 11664375 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2023-05-30 |
| 11538720 | Stacked transistors with different channel widths | Kangguo Cheng, Lawrence A. Clevenger, John H. Zhang | 2022-12-27 |
| 11522045 | Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack | Injo Ok, Soon-Cheon Seo, Charan V. V. S. Surisetty | 2022-12-06 |
| 11469146 | Methods of performing fin cut etch processes for FinFET semiconductor devices | Lei Zhuang, Lars Liebmann, Ruilong Xie, Terence B. Hook | 2022-10-11 |
| 11315922 | Fin cut to prevent replacement gate collapse on STI | Andrew M. Greene, Sivananda K. Kanakasabapathy, John R. Sporre | 2022-04-26 |
| 11302797 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Thamarai S. Devarajan, Sanjay C. Mehta, Muthumanickam Sankarapandian | 2022-04-12 |
| 11271151 | Phase change memory using multiple phase change layers and multiple heat conductors | Injo Ok, Kevin W. Brew, Wei Wang | 2022-03-08 |
| 11101367 | Contact-first field-effect transistors | Terence B. Hook, Myung-Hee Na, Andreas Scholze | 2021-08-24 |
| 11063216 | Confined phase change memory with double air gap | Injo Ok, Wei Wang | 2021-07-13 |