| 11101367 |
Contact-first field-effect transistors |
Terence B. Hook, Myung-Hee Na, Balasubramanian Pranatharthiharan |
2021-08-24 |
| 10297589 |
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode |
Robert J. Gauthier, Jr., Tom C. Lee, You Li, Rahul Mishra, Souvick Mitra |
2019-05-21 |
| 10249714 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction |
Dechao Guo, Shogo Mochizuki, Chun-Chen Yeh |
2019-04-02 |
| 9793272 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage |
Dechao Guo, Shogo Mochizuki, Chun-Chen Yeh |
2017-10-17 |
| 9786661 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction |
Dechao Guo, Shogo Mochizuki, Chun-Chen Yeh |
2017-10-10 |
| 9786765 |
FINFET having notched fins and method of forming same |
Edward J. Nowak, Brent A. Anderson |
2017-10-10 |
| 9704852 |
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode |
Robert J. Gauthier, Jr., Tom C. Lee, You Li, Rahul Mishra, Souvick Mitra |
2017-07-11 |
| 9601513 |
Subsurface wires of integrated chip and methods of forming |
Terence B. Hook, Lars Liebmann, Roger QUON, Andrew H. Simon |
2017-03-21 |
| 9536882 |
Field-isolated bulk FinFET |
Brent A. Anderson, Edward J. Nowak, Robert R. Robison |
2017-01-03 |
| 9390976 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction |
Dechao Guo, Shogo Mochizuki, Chun-Chen Yeh |
2016-07-12 |
| 9391065 |
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode |
Robert J. Gauthier, Jr., Tom C. Lee, You Li, Rahul Mishra, Souvick Mitra |
2016-07-12 |
| 8647935 |
Buried oxidation for enhanced mobility |
Brent A. Anderson, Edward J. Nowak |
2014-02-11 |
