Issued Patents All Time
Showing 25 most recent of 207 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12268026 | High aspect ratio contact structure with multiple metal stacks | Junli Wang, Brent A. Anderson, Indira Seshadri, Albert M. Young, Stuart A. Sieg +2 more | 2025-04-01 |
| 12230629 | Size-efficient mitigation of latchup and latchup propagation | — | 2025-02-18 |
| 12176289 | Semiconductor device design mitigating latch-up | David Wolpert, Leon Sigal | 2024-12-24 |
| 12062657 | Long channel and short channel vertical FET co-integration for vertical FET VTFET | Baozhen Li, Kirk D. Peterson, Junli Wang | 2024-08-13 |
| 12040250 | Heat pipe for vertically stacked field effect transistors | Brent A. Anderson, Anthony I. Chou | 2024-07-16 |
| 12015069 | Gate-all-around field effect transistor having multiple threshold voltages | Ruqiang Bao, Michael A. Guillorn, Robert R. Robison, Reinaldo Vega, Tenko Yamashita | 2024-06-18 |
| 11663391 | Latch-up avoidance for sea-of-gates | David Wolpert, Ryan Michael Kruse, Leon Sigal, Richard Edward Serton, Matthew S. Angyal +1 more | 2023-05-30 |
| 11569366 | Fully depleted SOI transistor with a buried ferroelectric layer in back-gate | Kangguo Cheng, Shawn P. Fetterolf | 2023-01-31 |
| 11469146 | Methods of performing fin cut etch processes for FinFET semiconductor devices | Lei Zhuang, Balasubramanian Pranatharthiharan, Lars Liebmann, Ruilong Xie | 2022-10-11 |
| 11393725 | Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device | Ruqiang Bao, Vijay Narayanan, Hemanth Jagannathan | 2022-07-19 |
| 11342446 | Nanosheet field effect transistors with partial inside spacers | Michael A. Guillorn, Robert R. Robison, Reinaldo Vega, Rajasekhar Venigalla | 2022-05-24 |
| 11251179 | Long channel and short channel vertical FET co-integration for vertical FET VTFET | Baozhen Li, Kirk D. Peterson, Junli Wang | 2022-02-15 |
| 11245020 | Gate-all-around field effect transistor having multiple threshold voltages | Ruqiang Bao, Michael A. Guillorn, Robert R. Robison, Reinaldo Vega, Tenko Yamashita | 2022-02-08 |
| 11195762 | Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device | Ruqiang Bao, Vijay Narayanan, Hemanth Jagannathan | 2021-12-07 |
| 11170151 | Checking wafer-level integrated designs for rule compliance | Larry Wissel | 2021-11-09 |
| 11152507 | Vertical field-effect transistor with a bottom contact that exhibits low electrical resistance | Chen Zhang, Tenko Yamashita, Brent A. Anderson | 2021-10-19 |
| 11146251 | Performance-screen ring oscillator with switchable features | John Bradley Deforge, Kirk D. Peterson, Theresa A. Newton, Andrew A. Turner | 2021-10-12 |
| 11145758 | Fully-depleted CMOS transistors with u-shaped channel | Kangguo Cheng, Robert H. Dennard, Bruce B. Doris | 2021-10-12 |
| 11101367 | Contact-first field-effect transistors | Myung-Hee Na, Balasubramanian Pranatharthiharan, Andreas Scholze | 2021-08-24 |
| 11067895 | Method and structures for personalizing lithography | John Bradley Deforge, Bassem M. Hamieh, Theresa A. Newton, Kirk D. Peterson | 2021-07-20 |
| 11011513 | Integrating a junction field effect transistor into a vertical field effect transistor | Brent A. Anderson, Huiming Bu, Xuefeng Liu, Junli Wang | 2021-05-18 |
| 10978454 | Semiconductor device and method of forming the semiconductor device | Brent A. Anderson, Shawn P. Fetterolf | 2021-04-13 |
| 10971356 | Stack viabar structures | Su Chen Fan, Hsueh-Chung Chen, Yann Mignot, James J. Kelly | 2021-04-06 |
| 10964812 | Integration of input/output device in vertical field-effect transistor technology | Xuefeng Liu, Junli Wang, Brent A. Anderson, Gauri Karve | 2021-03-30 |
| 10957794 | Vertical transistor contact for cross-coupling in a memory cell | Brent A. Anderson, Junli Wang | 2021-03-23 |