Issued Patents All Time
Showing 25 most recent of 437 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12433020 | Multi-VT solution for replacement metal gate bonded stacked FET | Ruqiang Bao, Dechao Guo, Heng Wu | 2025-09-30 |
| 12424591 | Method and structure of forming independent contact for staggered CFET | Ruilong Xie, Albert M. Chu, Albert M. Young, Brent A. Anderson, Ravikumar Ramachandran | 2025-09-23 |
| 12412830 | Semiconductor device with power via | Ruilong Xie, Kisik Choi, Julien Frougier, Reinaldo Vega, Lawrence A. Clevenger +2 more | 2025-09-09 |
| 12402408 | Stacked FETS including devices with thick gate oxide | Ruilong Xie, Julien Frougier, Nicolas Loubet, Ruqiang Bao, Min Gyu Sung +2 more | 2025-08-26 |
| 12396227 | Full wrap around backside contact | Ruilong Xie, Kisik Choi, Julien Frougier, Min Gyu Sung | 2025-08-19 |
| 12389582 | High density stacked vertical transistor static random access memory structure | Brent A. Anderson, Albert M. Chu, Hemanth Jagannathan | 2025-08-12 |
| 12376369 | FinFET devices | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2025-07-29 |
| 12369367 | Bulk nanosheet with dielectric isolation | Kangguo Cheng, Bruce B. Doris | 2025-07-22 |
| 12363990 | Upper and lower gate configurations of monolithic stacked FinFET transistors | Chen Zhang, Ruilong Xie, Dechao Guo, Sung-Dae Suk | 2025-07-15 |
| 12349445 | Vertically integrated semiconductor device | Heng Wu, Teresa J. Wu, Tenko Yamashita | 2025-07-01 |
| 12349458 | Staggered stacked circuits with increased effective width | Brent A. Anderson, Albert M. Chu | 2025-07-01 |
| 12342578 | Stacked layer memory suitable for SRAM and having a long cell | Brent A. Anderson, Albert M. Chu, Ruilong Xie, Carl Radens | 2025-06-24 |
| 12336294 | Gate-cut and separation techniques for enabling independent gate control of stacked transistors | Ruilong Xie, Nicolas Loubet, Julien Frougier, Lawrence A. Clevenger, Prasad Bhosale +2 more | 2025-06-17 |
| 12328859 | Stacked FET SRAM | Ruilong Xie, Carl Radens, Albert M. Chu, Brent A. Anderson, Julien Frougier +1 more | 2025-06-10 |
| 12322652 | Local interconnect for cross coupling | Heng Wu, Ruilong Xie, Albert M. Chu, Albert M. Young, Brent A. Anderson | 2025-06-03 |
| 12317537 | Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure | Ruilong Xie, Dechao Guo, Alexander Reznicek | 2025-05-27 |
| 12310072 | Middle of line structure with stacked devices | Su Chen Fan, Ruqiang Bao, Albert M. Young | 2025-05-20 |
| 12278184 | Vertically-stacked field effect transistor cell | Albert M. Chu, Albert M. Young, Dechao Guo | 2025-04-15 |
| 12278237 | Stacked FETS with non-shared work function metals | Ruilong Xie, Julien Frougier, Dechao Guo, Ruqiang Bao, Rishikesh Krishnan +1 more | 2025-04-15 |
| 12272648 | Semiconductor device having a backside power rail | Ruilong Xie, Julien Frougier, Dechao Guo, Lawrence A. Clevenger | 2025-04-08 |
| 12268026 | High aspect ratio contact structure with multiple metal stacks | Brent A. Anderson, Terence B. Hook, Indira Seshadri, Albert M. Young, Stuart A. Sieg +2 more | 2025-04-01 |
| 12268016 | Buried power rail formation for vertical field effect transistors | Ruilong Xie, Brent A. Anderson, Chen Zhang, Heng Wu, Alexander Reznicek | 2025-04-01 |
| 12176348 | Self-aligned hybrid substrate stacked gate-all-around transistors | Ruqiang Bao, Dechao Guo | 2024-12-24 |
| 12148833 | Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a wafer | Sung-Dae Suk, Somnath Ghosh, Chen Zhang, Devendra K. Sadana, Dechao Guo | 2024-11-19 |
| 12142599 | Stacked transistor structure with reflection layer | Teresa J. Wu, Tenko Yamashita, Heng Wu | 2024-11-12 |